Focused Ion Beam Analysis of Low-K Dielectrics

2000 ◽  
Author(s):  
H. J. Bender ◽  
R. A. Donaton
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Low K ◽  
Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

Imaging Thin Films of Nanoporous Low-k Dielectrics: Comparison between Ultramicrotomy and Focused Ion Beam Preparations for Transmission Electron Microscopy

2005 ◽  
Vol 12 (2) ◽  
pp. 156-159 ◽  
Author(s):  
Leslie E. Thompson ◽  
Philip M. Rice ◽  
Eugene Delenia ◽  
Victor Y. Lee ◽  
Phillip J. Brock ◽  
...  
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
Low K ◽  
Diamond Knife

Ultramicrotomy, the technique of cutting nanometers-thin slices of material using a diamond knife, was applied to prepare transmission electron microscope (TEM) specimens of nanoporous poly(methylsilsesquioxane) (PMSSQ) thin films. This technique was compared to focused ion beam (FIB) cross-section preparation to address possible artifacts resulting from deformation of nanoporous microstructure during the sample preparation. It was found that ultramicrotomy is a successful TEM specimen preparation method for nanoporous PMSSQ thin films when combined with low-energy ion milling as a final step. A thick, sacrificial carbon coating was identified as a method of reducing defects from the FIB process which included film shrinkage and pore deformation.

Multiple Double Cross-Section Transmission Electron Microscope Sample Preparation of Specific Sub-10 nm Diameter Si Nanowire Devices

2011 ◽  
Vol 17 (6) ◽  
pp. 889-895 ◽  
Author(s):  
Lynne M. Gignac ◽  
Surbhi Mittal ◽  
Sarunya Bangsaruntip ◽  
Guy M. Cohen ◽  
Jeffrey W. Sleight
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Nanowire ◽  
Dual Beam ◽  
Transmission Electron ◽  
High Resolution Tem

AbstractThe ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart.

Formation of Sub-100 NM GE Wires on Si by E-Beam Evaporation/Lithography

1995 ◽  
Vol 380 ◽  
Author(s):  
C. Deng ◽  
J. C. Wu ◽  
C. J. Barbero ◽  
T. W. Sigmon ◽  
M. N. Wybourne
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Substrates ◽  
Novel Technique ◽  
Atomic Force ◽  
Transmission Electron ◽  
First Time ◽  
Scanning Electron

ABSTRACTA fabrication process for sub-100 nm Ge wires on Si substrates is reported for the first time. Wires with a cross section of 6 × 57 nm2 are demonstrated. The wire structures are analyzed by atomic force (AFM), scanning electron (SEM), and transmission electron microscopy (TEM). Sample preparation for TEM is performed using a novel technique using both pre and in situ deposition of multiple protection layers using a Focused Ion Beam (FIB) micromachining system.

The Effect of Focused Ion Beam (Fib) Specimen Geometry on X-Ray Fluorescence During Energy Dispersive X-Ray Spectroscopy (EDS) Analysis in the Transmission Electron Microscope (TEM)

1998 ◽  
Vol 4 (S2) ◽  
pp. 856-857
Author(s):  
David M. Longo ◽  
James M. Howe ◽  
William C. Johnson
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Materials Science ◽  
Bulk Material ◽  
Ion Beam ◽  
Energy Dispersive ◽  
Specimen Preparation ◽  
X Ray ◽  
Transmission Electron

The focused ion beam (FIB) has become an indispensable tool for a variety of applications in materials science, including that of specimen preparation for the transmission electron microscope (TEM). Several FIB specimen preparation techniques have been developed, but some problems result when FIB specimens are analyzed in the TEM. One of these is X-ray fluorescence from bulk material surrounding the thin membrane in FIB-prepared samples. This paper reports on a new FIB specimen preparation method which was devised for the reduction of X-ray fluorescence during energy dispersive X-ray spectroscopy (EDS) in the TEM.Figure 1 shows three membrane geometries that were investigated in this study on a single-crystal Si substrate with a RF sputter-deposited 50 nm Ni film. Membrane 1 is the most commonly reported geometry in the literature, with an approximately 20 urn wide trench and a membrane having a single wedge with a 1.5° incline.

Focused Ion Beam Sectioning and Lift-out Method for Copper and Resist Vias in Organic Low-k Dielectrics

2002 ◽  
Vol 8 (6) ◽  
pp. 502-508 ◽  
Author(s):  
E.J. Crawford ◽  
L. Gignac ◽  
K. Barth ◽  
J. Petrus ◽  
E. Levine
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Scanning Transmission Electron Microscope ◽  
Sem Analysis ◽  
Ex Situ ◽  
Ion Milling ◽  
Transmission Electron ◽  
Low K

The focused ion beam lift-out technique for scanning electron microscope (SEM) and transmission electron microscope (TEM) sample preparation was shown to be applicable to copper/low-k dielectric semiconductor technology. High resolution SEM, TEM, and scanning transmission electron microscope analyses were performed on metal contacts and resist vias with no evidence of the interface damage or metal smearing commonly observed with mechanical polishing. Ion milling of the sample ex situ to the substrate provided decoration and adjustment of the exposed plane of the section when necessary for SEM analysis.

scholarly journals Ex-Situ "Auto Lift" Technique for TEM Sample Preparation

2005 ◽  
Vol 13 (6) ◽  
pp. 40-41
Author(s):  
Keyword(s):  
Electron Microscope ◽  
Sample Preparation ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Ex Situ ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Dual Column ◽  
Microprocessor Industry

"The most advantageous feature of the ex-situ lift out method is throughput."A great deal of emphasis is placed on "throughput" in the microprocessor industry. Wafer sizes are getting larger and the costs of building them have increased astronomically. The transmission electron microscope (TEM) has become the essential tool for examining current microprocessor products. The TEM can only be effective if it has properly prepared specimens to put into it. In order to achieve the highest specimen preparation spatial resolution, the microprocessor industry has turned to focused ion beam (FIB) tools, either single or dual column, for TEM specimen preparation in applications ranging from process control to failure analysis, and on to semiconductor device metrology.

Effect of Surface Roughness on STEM Samples Prepared by FIB

1999 ◽  
Vol 5 (S2) ◽  
pp. 906-907
Author(s):  
C.B. Vartuli ◽  
F.A. Stevie ◽  
T. Kamino
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Surface ◽  
Scanning Transmission Electron Microscope ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Speed Of Analysis ◽  
Scanning Electron ◽  
Effect Of Surface

The Scanning Transmission Electron Microscope (STEM) can provide images beyond Scanning Electron Microscope (SEM) capability, on samples which do not have to be prepared to the degree required for Transmission Electron Microscopy (TEM). For some applications, such as semiconductor production, speed of analysis is critical. This paper explores Focused Ion Beam (FIB) sample preparation for STEM.The samples were prepared using an Hitachi FB-2000A FEB tool. Two analysis regions of similar thickness were cut. The rough sample was milled using a 500 pA beam and no polish cut. The smooth sample was prepared by cutting first with a 500 pA beam, and then using additional, smaller diameter beams, concluding with a 30 pA beam. This resulted in a sample surface polished to a degree similar to that used for TEM specimens. The samples were imaged in an Hitachi HD-2000 STEM at 200KeV. Transmission electron images taken at 100 kx are shown in Figure 1 of the rough sample and of the smooth sample.

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