Oxidation Kinetics of Impurities in Metallurgical-Grade Silicon Melt by O2 Blowing Refining Process

2021 ◽  
Author(s):  
Naiyong He ◽  
Ding Yang ◽  
Min Xu ◽  
Jijun Wu ◽  
Kuixian Wei ◽  
...  
Keyword(s):  
Oxidation Kinetics ◽  
Refining Process ◽  
Metallurgical Grade Silicon ◽  
Silicon Melt ◽  
Grade Silicon ◽  
Kinetics Of

Study of the Removal of Boron from Metallurgical Grade Silicon by Oxidation Slagging Method

2010 ◽  
Vol 156-157 ◽  
pp. 882-885 ◽  
Author(s):  
Yu Yan Hu ◽  
Dong Liang Lu ◽  
Tao Lin ◽  
Yu Liu ◽  
Bo Wang ◽  
...  
Keyword(s):  
Removal Efficiency ◽  
Orthogonal Experiment ◽  
Slag System ◽  
Refining Process ◽  
Impact Factors ◽  
Metallurgical Grade Silicon ◽  
Optimum Parameters ◽  
Grade Silicon ◽  
Refining Time ◽  
The Impact

Refining of solar grade silicon by metallurgical method is the research hotspot of polycrystalline field. Slagging method is benefit to the removal of the impurities especially to boron exsisted in the raw silicon. In this study, the influence of the density, the viscosity and liquidus temperature of the slag components on the refining process were discussed, and then the slag system SiO2-Na2CO3 was choosed as the slagging agents. And then the impact factors on the removal efficiency of boron such as the composition of SiO2 and Na2CO3, the ratio of slag to silicon and the refining time were investigated by the orthogonal experiment. The results showed that the optimum parameters of the oxidation refining for removing boron were as follows: the main composition of the oxidant is “SiO2 : Na2CO3 = 60% : 40%”; the slag/silicon ratio is 0.5; time for refining is 60min at 1550 . The results indicated that the removal efficiency of boron was 88.28%, and the content of boron in MG-Si can be reduced to 7ppmw under the best refining process¬.

Reaction Mechanism and Kinetics of Boron Removal from Metallurgical-Grade Silicon Based on Li2O-SiO2 Slags

JOM ◽  
2015 ◽  
Vol 68 (9) ◽  
pp. 2371-2380 ◽  
Author(s):  
Huixian Lai ◽  
Liuqing Huang ◽  
Chenghao Lu ◽  
Ming Fang ◽  
Wenhui Ma ◽  
...  
Keyword(s):  
Reaction Mechanism ◽  
Boron Removal ◽  
Metallurgical Grade Silicon ◽  
Mechanism And Kinetics ◽  
Grade Silicon ◽  
Silicon Based ◽  
Kinetics Of

Kinetics of iron removal from metallurgical grade silicon with pressure leaching

Rare Metals ◽  
2011 ◽  
Vol 30 (6) ◽  
pp. 688-694 ◽  
Author(s):  
Zhanliang Yu ◽  
Keqiang Xie ◽  
Wenhui Ma ◽  
Yang Zhou ◽  
Gang Xie ◽  
...  
Keyword(s):  
Iron Removal ◽  
Pressure Leaching ◽  
Metallurgical Grade Silicon ◽  
Grade Silicon ◽  
Kinetics Of

Diffusion and mass transfer of boron in molten silicon during slag refining process of metallurgical grade silicon

2015 ◽  
Vol 404 ◽  
pp. 70-74 ◽  
Author(s):  
Jijun Wu ◽  
Fanmao Wang ◽  
Zhengjie Chen ◽  
Wenhui Ma ◽  
Yanlong Li ◽  
...  
Keyword(s):  
Mass Transfer ◽  
Refining Process ◽  
Molten Silicon ◽  
Metallurgical Grade Silicon ◽  
Slag Refining ◽  
Grade Silicon

Impact Of Synthesis Route on the Water Oxidation Kinetics of Hematite Photoanodes

2020 ◽  
Author(s):  
Camilo A. Mesa ◽  
Ludmilla Steier ◽  
Benjamin Moss ◽  
Laia Francàs ◽  
James E. Thorne ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Reaction Kinetics ◽  
Water Oxidation ◽  
Oxidation Kinetics ◽  
Oxidation Reaction ◽  
Charge Accumulation ◽  
Optical Signals ◽  
Current Voltage ◽  
Voltage Performance ◽  
Kinetics Of

<p><i>Operando</i> spectroelectrochemical analysis is used to determine the water oxidation reaction kinetics for hematite photoanodes prepared using four different synthetic procedures. Whilst these photoanodes exhibit very different current / voltage performance, their underlying water oxidation kinetics are found to be almost invariant. Lower photoanode performance was found to correlate with the observation of optical signals indicative of charge accumulation in mid-gap oxygen vacancy states, indicating these states do not contribute directly to water oxidation.</p>

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