Increase mechanism of indium-tin-oxide work function by KrF excimer laser irradiation

2005 ◽  
Vol 34 (3) ◽  
pp. L9-L11 ◽  
Author(s):  
Yow-Jon Lin ◽  
Chou-Wei Hsu ◽  
Yao-Ming Chen ◽  
Yung-Chi Wang
2005 ◽  
Vol 23 (5) ◽  
pp. 1305-1308 ◽  
Author(s):  
Yow-Jon Lin ◽  
Iain D. Baikie ◽  
Wei-Yang Chou ◽  
Shih-Ting Lin ◽  
Hsing-Cheng Chang ◽  
...  

1996 ◽  
Vol 96-98 ◽  
pp. 363-369 ◽  
Author(s):  
T. Szo¨re´nyi ◽  
L.D. Laude ◽  
I. Berto´ti ◽  
Zs. Geretovszky ◽  
Z. Ka´ntor

1999 ◽  
Vol 107 (1252) ◽  
pp. 1229-1231 ◽  
Author(s):  
Jong-Won YOON ◽  
Katsuki HIGAKI ◽  
Masaru MIYAYAMA ◽  
Tetsuichi KUDO

1990 ◽  
Vol 5 (12) ◽  
pp. 2835-2840 ◽  
Author(s):  
Koji Sugioka ◽  
Hideo Tashiro ◽  
Koichi Toyoda ◽  
Hideyuki Murakami ◽  
Hiroshi Takai

The chemical stability of the surface of stainless steel (SUS) 304 in acid immersion tests is greatly improved by the laser implant-deposition (LID) process, i.e., the simultaneous deposition and incorporation of silicon by KrF excimer laser irradiation. The etching depths of the treated samples in 1.32 N HCl solution are substantially zero at the laser irradiation conditions of more than 40 pulses and of more than 400 mJ/cm2 at the surface. By the quantitative verification of cathodic polarization in 1 N H2SO4, the highest polarization resistance is estimated to be 26.7 times that of the nontreated sample.


1994 ◽  
Vol 345 ◽  
Author(s):  
Yasutaka Uchida ◽  
Masakiyo Matsumura

AbstractXPS measurement showed that undesirable SiNH component was reduced drastically from the low-temperature deposited SiN surface by intense ArF excimer-laser irradiation. Although the improved layer was as thin as 15nm, it was very effective to stop diffusion of N atoms from the bottom SiN layer to the top Si layer during the excimer-laser recrystallization step. N-diffused Si layer at the Si/SiN interface was less than the XPS resolution limit for the pre-annealed SiN structure, but about 5nm thick. As a result, the field-effect mobility of the poly-Si/SiN TFT was increased drastically by laser-irradiation to SiN film. Annealing characteristics are also presented for the various SiN film thicknesses and for both the ArF and KrF excimer-laser lights.


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