Investigation of Structural and Electrical Properties of B-Site Complex Ion (Mg1/3Nb2/3)4+-Modified High-Curie-Temperature BiFeO3-BaTiO3 Ceramics

(1-x)(0.6BIT-0.4BT)-xBiYbO3(BTBY) ceramics with high Curie temperature were prepared by the conventional processing. The effect of BiYbO3 content on the microstructure and electrical properties was investigated. The results show that the main phase of BTBY ceramics is BIT-BT, and a new phase BaBi4Ti4O15 (BBT) appeared. The grain morphology of BTPY ceramics are platelike and the grain size was significantly increased with increasing content of BiYbO3 .Tc of all the BTBY samples are above 440 . The BTBY ceramics show obvious dielectric relaxor characteristic. The dispersion factor γ, the dielectric constant εr, and the dielectric loss tanδ decreased with increasing the content of BiYbO3. When the content of BiYbO3 is 0.06, the optimal properties of BTBY ceramics are obtained, Tc is 457 , εr is 165, tanδ is 0.0223 and d33 is 10 pC·N-1.

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Low-temperature sintering and electrical properties of (K, Na)NbO3 based lead-free ceramics with high Curie temperature

Ceramics International ◽

10.1016/j.ceramint.2011.04.105 ◽

2012 ◽

Vol 38 ◽

pp. S295-S299 ◽

Cited By ~ 8

Author(s):

You-Liang Wang ◽

Yi-Qing Lu ◽

Meng-Jia Wu ◽

Dong Wang ◽

Yong-Xiang Li

Keyword(s):

Electrical Properties ◽

Low Temperature ◽

Curie Temperature ◽

Lead Free ◽

High Curie Temperature ◽

Low Temperature Sintering ◽

Lead Free Ceramics

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Enhancing electrical properties of high-Curie temperature piezoelectric ceramics BNT-PZT and their mechanism

Current Applied Physics ◽

10.1016/j.cap.2019.09.002 ◽

2019 ◽

Vol 19 (12) ◽

pp. 1367-1373 ◽

Cited By ~ 1

Author(s):

Wanwan Ji ◽

Bijun Fang ◽

Xiangyong Zhao ◽

Shuai Zhang ◽

Xiaolong Lu ◽

...

Keyword(s):

Electrical Properties ◽

Curie Temperature ◽

Piezoelectric Ceramics ◽

High Curie Temperature

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Preparation of Bi-Based High Curie Temperature PTCR Ceramic

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.368-372.459 ◽

2008 ◽

Vol 368-372 ◽

pp. 459-460

Author(s):

Yun He Liang ◽

Yong Ping Pu ◽

Hong Yan Miao

Keyword(s):

Electrical Properties ◽

Curie Temperature ◽

Mixed Oxide ◽

High Curie Temperature ◽

Ceramic Samples ◽

Two Systems ◽

Nb Content

PTCR ceramic samples of two systems, Bi4Ti3-xNbxO12+x/2(BTNO, 0≤x≤0.01) and Bi4Ti3O12 + (1-z)BaTi1-xNbxO3+x/2+2.0mol%TiO2 (BTO+(1-z)BTNO, 0≤x≤0.01, 0≤z≤1.0), were prepared by mixed oxide method. The properties of the sapmples were characterized by XRD, AFM and electrical properties testing. The results showed that single BaBi4Ti4O15 was obtained when x=0.05 and z=0.5. The roomtemperature resistivity of BTO+(1-z)BTNO ceramic sintered in air was 102-1045·cm. The minimum resistivity occurred at Nb content of about 0.3mol%.

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Preparation and electrical properties of high-Curie temperature ferroelectrics

The European Physical Journal Applied Physics ◽

10.1051/epjap/2009004 ◽

2009 ◽

Vol 45 (2) ◽

pp. 20302 ◽

Cited By ~ 20

Author(s):

B.-J. Fang ◽

C.-L. Ding ◽

W. Liu ◽

L.-Q. Li ◽

L. Tang

Keyword(s):

Electrical Properties ◽

Curie Temperature ◽

High Curie Temperature

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The PTCR Performance of Nb-Doped BaTiO3-NBT Ceramics

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.299-300.512 ◽

2011 ◽

Vol 299-300 ◽

pp. 512-515

Author(s):

Li Zhe Li ◽

Xing Wen Zhu ◽

Tie Zhu Xu ◽

Min Gong ◽

Wen Zhong Jiang ◽

...

Keyword(s):

Electrical Properties ◽

Curie Temperature ◽

High Purity ◽

Room Temperature ◽

Second Phase ◽

Room Temperature Resistivity ◽

Temperature Resistance ◽

Structural And Electrical Properties ◽

Curie Temperature Tc ◽

Temperature Resistivity

In this paper, Nb-doped BaTiO3-(Na0.5Bi0.5)TiO3(BBNT-Nb) based PTCR ceramic material has been prepared using high purity Nb2O5, Bi2O3, Na2CO3,TiO2and BaTiO3powders as starting materials, and its structural and electrical properties are investigated. The results indicated that the Nb2O5dopant is helpful not only to promote the formation of tetragonal BBNT structure without any second phase, but also to decrease the room-temperature resistivity. For the 0.10at% Nb-doped BBNT material with BNT content 35mol%, the properties of room-temperature resistance of 104Ω·cm, temperature coefficient (αk) of 6.3%/°C, PTCR anomaly lg(Rmax/Rmin) of 3.6 and Curie temperature (Tc) of 193°C are obtained.

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