Study on Microstructure and Properties of BTBY Piezoelectric Ceramics with High Curie Temperature

2010 ◽  
Vol 156-157 ◽  
pp. 1541-1544
Author(s):  
Bo Li ◽  
Feng Gao ◽  
Liang Liang Liu ◽  
Bei Xu

(1-x)(0.6BIT-0.4BT)-xBiYbO3(BTBY) ceramics with high Curie temperature were prepared by the conventional processing. The effect of BiYbO3 content on the microstructure and electrical properties was investigated. The results show that the main phase of BTBY ceramics is BIT-BT, and a new phase BaBi4Ti4O15 (BBT) appeared. The grain morphology of BTPY ceramics are platelike and the grain size was significantly increased with increasing content of BiYbO3 .Tc of all the BTBY samples are above 440 . The BTBY ceramics show obvious dielectric relaxor characteristic. The dispersion factor γ, the dielectric constant εr, and the dielectric loss tanδ decreased with increasing the content of BiYbO3. When the content of BiYbO3 is 0.06, the optimal properties of BTBY ceramics are obtained, Tc is 457 , εr is 165, tanδ is 0.0223 and d33 is 10 pC·N-1.

2011 ◽  
Vol 399-401 ◽  
pp. 783-787
Author(s):  
Ning Zhang Wang ◽  
Zhang Wen

CuO and MnCO3 doped SrTiO3-based multifunction ceramics were prepared respectively with solid state reaction method under vacuum condition. The electrical properties’ change with the oxidation temperature and microstructure were investigated. The results show that acceptor dopants behaves differently with the same sintering conditions. CuO-doped ceramic possess relative higher dielectric loss, dielectric constant and relative lower nonlinear coefficient, varistor voltage in contrast with MnCO3 doped ceramic with the same contents under the same sintering conditions. The grain size of CuO-doped sample is significantly larger than the sample doped with MnCO3. The grain distributions of CuO-doped sample is more homogeneous. The electrical properties of the ceramics are different due to the different behaviors of CuO and MnCO3 accepter dopants during the sintering process.


2018 ◽  
Vol 10 (1) ◽  
pp. 18
Author(s):  
Moh. Sinol ◽  
Erika Rani

<p>Physical and electrical properties of The SiO<sub>2</sub>-ZnO mixing at different compositions were investigated. The experiment used simple mixing method at the sintering temperature 600<sup>o</sup>C. It was used the composition mixing ratio of SiO<sub>2</sub>:ZnO ie. 0<strong>:</strong>10; 7<strong>:</strong>3; 5<strong>:</strong>5; 3<strong>:</strong>7; and 10:0 (%Wt)<sub>. </sub>Based on X-Ray Diffraction (XRD) results, it obtained that a new phase in each sample was not formed even though having different diffraction peak. The mixing ratio of SiO<sub>2</sub>: ZnO nanocomposite (7:3 %wt) had the biggest grain size (77,92 nm), the highest dielectric constant (3.00E+05) and the smallest conductivity (0,726549 (Ωm)<sup>-1</sup>). On the other side, the mixing ratio of SiO<sub>2</sub>: ZnO nanocomposite (5:5 %wt) had the smallest grain size (35.42nm), dielectric constant (3.00E+2) and the highest conductivity (25.36729  (Ωm)<sup>-1</sup>). It can be concluded that the difference of composition ratio offered the change on both physical and electrical properties of SiO<sub>2</sub>-ZnO nanocomposite. </p>


AIP Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 075119
Author(s):  
Bo Li ◽  
Fei Zhu ◽  
Deyi Zheng ◽  
Chi pang ◽  
Zihao Fei

2007 ◽  
Vol 336-338 ◽  
pp. 775-778
Author(s):  
Yu Xing Xu ◽  
Zi Long Tang ◽  
Zhong Tai Zhang ◽  
Li Hai Xu

Sr0.48Ba0.24Ca0.28TiO3-based varistor ceramics with an excellent capacitor-varistor multifunctional characteristics (V1mA = 11 ~ 49 ν.mm-1, α = 6.1 ~ 11.3, ε r max=3.5×105, tanδmin = 5%) were prepared using conventional solid method. The effect of oxidation temperature and time on structure and electrical properties were investigated. The results show that with increasing the oxidation temperature from 800°C to 900°C, the varistor voltage V1mA and non-linearity coefficient α defining varistor characteristics increase linearly, while the dielectric constant ε r and dielectric loss tanδ decrease linearly. There exists an optimum α value when the specimens were oxidized at 850°C for 3h. This behavior was explained through various defect reactions of dopants.


2018 ◽  
Vol 280 ◽  
pp. 142-148 ◽  
Author(s):  
Norhizatol Fashren Muhamad ◽  
Rozana Aina Maulat Osman ◽  
Mohd Sobri Idris ◽  
Faizal Jamlos ◽  
Nor Azura Malini Ahmad Hambali

Present investigation provides experimental studies on cylindrical dielectric resonator antennas (CDRAs) fabricated from SrTi1-xZrxO3ceramic with different substitution of Zr in place of Ti for (0 ≤ x ≤1). Ceramic powder were prepared using conventional solid state reaction method. X-ray Diffraction exposes physical properties Zr-doped SrTiO3which exhibit phase transition from cubic, tetragonal to orthorhombic phase. The electrical properties such as dielectric constant (εr) and dielectric loss (tan δ) were studied in variation of temperatures and frequencies. At room temperature the dielectric constant decreased from 240 to 21 with increase of Zr content however the amazing result was obtained for multiband antenna by Zr content. The dielectric loss obtain shows very low loss value roughly below 0.07 for all samples. The variations of return loss, resonance frequency and bandwidth of CDRAs at their respective resonant frequencies are studied experimentally.


1996 ◽  
Vol 433 ◽  
Author(s):  
Kwangsoo No ◽  
Joon Sung Lee ◽  
Han Wook Song ◽  
Won Jong Lee ◽  
Byoung Gon Yu ◽  
...  

AbstractBa(TMHD)2, Sr(TMHD)2 and Ti-isopropoxide were used to fabricate the (SrxTi1 x)O3 and (Ba1 x Srx)TiO3 thin films. The decomposition and degradation characteristics of Ba(TMHD)2 and Sr(TMHD)2 with storage time were analyzed using a differential scanning calorimeter (DSC). The thin films were fabricated on Si(p-type 100) and Pt/SiO2/Si substrates with Ar carrier gas using ECR plasma (or without ECR plasma) assisted MOCVD. Experimental results showed that the ECR oxygen plasma increased the deposition rate, the ratio of Sr/Ti, the dielectric constant and the leakage current density of the film. The dependency of the crystallinity and the electrical properties on the Sr/Ti ratio of films were investigated. However, almost of the films deposited with Ar carrier gas had slightly high dielectric loss and high leakage current density and showed non-uniform compositional depth profiles. NH3 gas was also used to decrease the degradation of the MO-sources. Mass spectra in-situ monitoring of source vapors in ECR-PAMOCVD system were obtained. By introducing NH3 as a carrier gas, a significant improvement was achieved in the volatility and the thermal stability of the precursors, and the vaporization temperatures of the precursors were reduced compared to Ar carrier gas. The uniform compositional depth profile, less hydrogen and carbon content and the good electrical properties of (SrxTi1−x)O3 thin films were obtained with NH3 carrier gas. The (Ba1−xSrx)TiO3 thin film were fabricated to have very fine and uniform microstructure, the dielectric constant of 456, the dielectric loss of 0.0128, the leakage current density of 5.01 × 10−8A/cm2 at 1V and the breakdown field of 3.65MV/cm.


2008 ◽  
Vol 368-372 ◽  
pp. 456-458
Author(s):  
Huan Liu ◽  
Shu Ping Gong ◽  
Dong Xiang Zhou ◽  
Chun Fang Cheng ◽  
Zhi Ping Zheng ◽  
...  

Dense PTC ceramics were prepared with BaTiO3 nanopowders synthesized by hydrothermal method. BaCO3 and Ti(OC4H9)4 were used as barium and titanium sources, and Y(NO)3·6H2O as the donor dopant respectively. The average grain size of the powders obtained after hydrothermal treatment at 160°C for 9h was about 30nm with cubic structure. Mn(NO3)2 was introduced to the as-prepared nanopowders in order to improve the PTC effect. After sintered at 1280°C, the PTC ceramic samples exhibited sufficient resistance jump ratio(1.086×103) around Curie temperature, the density of which was 5.81g/cm3(96.5% of the theoretical density).


Sign in / Sign up

Export Citation Format

Share Document