Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

2016 ◽  
Vol 45 (11) ◽  
pp. 5621-5625 ◽  
Author(s):  
Y. Kouhlane ◽  
D. Bouhafs ◽  
N. Khelifati ◽  
S. Belhousse ◽  
H. Menari ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Carrier Lifetime ◽  
Rapid Thermal Processing ◽  
Type Silicon ◽  
P Type

The effect of oxide precipitates on minority carrier lifetime in p-type silicon

2011 ◽  
Vol 110 (5) ◽  
pp. 053713 ◽  
Author(s):  
J. D. Murphy ◽  
K. Bothe ◽  
M. Olmo ◽  
V. V. Voronkov ◽  
R. J. Falster
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Silicon ◽  
P Type

Contactless Measurements of Slip Lines Intentionally Introduced in Si Wafers During Rapid Thermal Processing

1991 ◽  
Vol 224 ◽  
Author(s):  
A. Usami ◽  
H. Shiraki ◽  
H. Fujiwara ◽  
R. Abe ◽  
N. Osamura ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Signal Intensity ◽  
Carrier Lifetime ◽  
Temperature Drop ◽  
Rapid Thermal Processing ◽  
X Ray ◽  
Slip Lines ◽  
Recombination Centers ◽  
Microwave Probe ◽  
Good Agreement

AbstractThe slip lines introduced in Si wafers during rapid thermal processing (RTP) were revealed with focused reflectance microwave probe (RMP) method. The signal intensity of RMP which is related to optically injected excess carrier concentration decreases at slip lines. The region in which the signal intensity decreased is in good agreement with results of X-ray topography and theoretical analysis considering thermal stress caused by temperature drop at the wafer periphery during RTP. According these results, it is considered that carrier lifetime is decreased by slip dislocations which are effective recombination centers.

Junction Formation in Silicon Using a Phosphorus Vapor Source and Rapid Thermal Drive-In

1992 ◽  
Vol 260 ◽  
Author(s):  
Eric R. White ◽  
S. Ashok ◽  
D. L. Allara
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Metal Contacts ◽  
Red Phosphorus ◽  
Vapor Source ◽  
Junction Formation ◽  
Dopant Atoms ◽  
Cv Measurements ◽  
P Type ◽  
Vapor Treatment

ABSTRACTn+-n and n+-p junctions were formed on n-type and p-type Si using a thin film of phosphorus obtained from a simple vapor source, and driving in the dopant atoms in a rapid thermal processing (RTP) system. The vapor treatment consisted of heating powdered red phosphorus in a nitrogen ambient and allowing the resulting phosphorus vapor to deposit on the Si samples. This was done in an inexpensive apparatus constructed from flasks and test tubes. Following the vapor treatment, an SiOxfilm was sputtered over the phosphorus coating in order to serve as a capping layer during subsequent RTP drive-in that forms the junction. The junction properties were characterized by spreading resistance and electrical (IV and CV) measurements after deposition of metal contacts layers.

Ion Implantation-Induced Defects and the Influence of Titanium Silicidation

1998 ◽  
Vol 510 ◽  
Author(s):  
D.Z. Chi ◽  
S. Ashok ◽  
D. Theodore
Keyword(s):  
Ion Implantation ◽  
Thermal Processing ◽  
Thermal Evolution ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Thermal Signature ◽  
P Type ◽  
Induced Defects

AbstractThermal evolution of ion implantation-induced defects and the influence of concurrent titanium silicidation in pre-amorphized p-type Si (implanted with 25 KeV, 1016 cm2Si+) under rapid thermal processing (RTP) have been investigated. Presence of implantation-induced electrically active defects has been confirmed by current-voltage (IV) and deep level transient spectroscopy (DLTS) measurements. DLTS characterization results show that the evolution of electrically active defects in the Si implanted samples under RTP depend critically on the RTP temperature: Hole traps HI (0.33 eV) and H4 (0.47 eV) appear after the highest temperature (950 °C) anneal, while a single trap H3 (0.26 eV) shows up at lower anneal temperatures (≤ 900 °C). The thermal signature of H4 defect is very similar to that of the iron interstitial while those of HI and H3 levels appear to originate from some interstitial-related defects, possibly complexes. A most interesting finding is that the above interstitial related defects can be eliminated completely with Ti silicidation, apparently a result of vacancy injection. However the silicidation process itself introduces a new H2 (0.30 eV) level, albeit at much lower concentration. This same H2 level is also seen in unimplanted samples under RTP. The paper will present details of defect evolution under various conditions of RTP for samples with and without the self-implantation and silicidation.

Redistribution of Dopant and Impurity Concentrations During the Formation of Uniform Wsi2 Films by RTP

1988 ◽  
Vol 100 ◽  
Author(s):  
Michael P. Siegal ◽  
Jorge J. Santiago
Keyword(s):  
Thermal Processing ◽  
Dopant Concentration ◽  
High Vacuum ◽  
Rapid Thermal Processing ◽  
Si Substrate ◽  
Time Intervals ◽  
Boron Dopant ◽  
P Type ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectroscopy has been used to study the effects of rapid thermal processing on the formation of tetragonal tungsten disilicide thin films on Si(100), p-type 5 Omaga;, cm wafers. The substrates were chemically etched, followed by an RF sputter depostion of 710Å W metal. The samples were then fast radiatively processed in an RTP system for time intervals ranging from 15 to 45 seconds at high temperature (∼1100°C) under high vacuum.The redistribution of the boron dopant concentration profile is studied and shows that boron moves from the Si-substrate into the growing Wsi2 film, eventually escaping into the vacuum. Oxygen is the major impurity in these samples and its removal from the interface has been shown to improve the quality of the silicide film. Trace quantities of F, Cl, Na, K, C and Cr have also been detected.

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