Redistribution of Dopant and Impurity Concentrations During the Formation of Uniform Wsi2 Films by RTP

Si Substrate ◽

Time Intervals ◽

Boron Dopant ◽

P Type ◽

ABSTRACTSecondary ion mass spectroscopy has been used to study the effects of rapid thermal processing on the formation of tetragonal tungsten disilicide thin films on Si(100), p-type 5 Omaga;, cm wafers. The substrates were chemically etched, followed by an RF sputter depostion of 710Å W metal. The samples were then fast radiatively processed in an RTP system for time intervals ranging from 15 to 45 seconds at high temperature (∼1100°C) under high vacuum.The redistribution of the boron dopant concentration profile is studied and shows that boron moves from the Si-substrate into the growing Wsi2 film, eventually escaping into the vacuum. Oxygen is the major impurity in these samples and its removal from the interface has been shown to improve the quality of the silicide film. Trace quantities of F, Cl, Na, K, C and Cr have also been detected.

Formation of Ultra-Shallow Junctions in Silicon by Rapid Thermal Vapor Phase Doping in an Ultrahigh Vacuum Rapid Thermal Processing System

MRS Proceedings ◽

10.1557/proc-387-395 ◽

1995 ◽

Vol 387 ◽

Author(s):

Patricia A. O'neil ◽

Katherine E. Violeite ◽

Mehmet C. Öztürk ◽

Igor C. Ivanov

Keyword(s):

Vapor Phase ◽

Thermal Processing ◽

High Vacuum ◽

Processing System ◽

Growth Conditions ◽

Ultra High Vacuum ◽

Ultra Shallow Junctions ◽

P Type ◽

Wafer Manufacturing

AbstractIn this work, we have studied the formation of ultra-shallow p-type junctions by rapid vapor phase doping. The doping process was performed in an ultra high vacuum rapid thermal processing system using 0.1 l/min of a B2H6/H2 mixture. The B2H6 content of the mixture was only. 500 ppm corresponding to a B2H6 flow of 50 μl/min. In contrast, previous work in conventional and rapid thermal processing systems used B2H6 flows as high as 0.1 l/min which tend to form either pure boron or boron silicide layers depending on the processing conditions. In this study we exposed 4″, (100) oriented, n- and p-type silicon wafers to the B2H6/H2 mixture for varying growth conditions. Boron junction profiles were obtained at temperatures ranging from 650°C to 850°C. Boron dose, peak concentration, and junction depth were found as a function of growth temperature and time. Our results show that ultra-shallow (≤ 500 Å) boron profiles with surface concentrations above 1020 cm−3 can be obtained in Si at temperatures as low as 650°C. Typical process times range from 15 to 90 seconds making the process a good candidate for single wafer manufacturing in rapid thermal processing systems.

Junction Formation in Silicon Using a Phosphorus Vapor Source and Rapid Thermal Drive-In

MRS Proceedings ◽

10.1557/proc-260-265 ◽

1992 ◽

Vol 260 ◽

Cited By ~ 1

Author(s):

Eric R. White ◽

S. Ashok ◽

D. L. Allara

Keyword(s):

Thermal Processing ◽

Metal Contacts ◽

Red Phosphorus ◽

Vapor Source ◽

Junction Formation ◽

Dopant Atoms ◽

Cv Measurements ◽

P Type ◽

Vapor Treatment

ABSTRACTn+-n and n+-p junctions were formed on n-type and p-type Si using a thin film of phosphorus obtained from a simple vapor source, and driving in the dopant atoms in a rapid thermal processing (RTP) system. The vapor treatment consisted of heating powdered red phosphorus in a nitrogen ambient and allowing the resulting phosphorus vapor to deposit on the Si samples. This was done in an inexpensive apparatus constructed from flasks and test tubes. Following the vapor treatment, an SiOxfilm was sputtered over the phosphorus coating in order to serve as a capping layer during subsequent RTP drive-in that forms the junction. The junction properties were characterized by spreading resistance and electrical (IV and CV) measurements after deposition of metal contacts layers.

Ion Implantation-Induced Defects and the Influence of Titanium Silicidation

MRS Proceedings ◽

10.1557/proc-510-275 ◽

1998 ◽

Vol 510 ◽

Author(s):

D.Z. Chi ◽

S. Ashok ◽

D. Theodore

Keyword(s):

Ion Implantation ◽

Thermal Processing ◽

Thermal Evolution ◽

Deep Level ◽

Current Voltage ◽

Transient Spectroscopy ◽

Thermal Signature ◽

P Type ◽

Induced Defects

AbstractThermal evolution of ion implantation-induced defects and the influence of concurrent titanium silicidation in pre-amorphized p-type Si (implanted with 25 KeV, 1016 cm2Si+) under rapid thermal processing (RTP) have been investigated. Presence of implantation-induced electrically active defects has been confirmed by current-voltage (IV) and deep level transient spectroscopy (DLTS) measurements. DLTS characterization results show that the evolution of electrically active defects in the Si implanted samples under RTP depend critically on the RTP temperature: Hole traps HI (0.33 eV) and H4 (0.47 eV) appear after the highest temperature (950 °C) anneal, while a single trap H3 (0.26 eV) shows up at lower anneal temperatures (≤ 900 °C). The thermal signature of H4 defect is very similar to that of the iron interstitial while those of HI and H3 levels appear to originate from some interstitial-related defects, possibly complexes. A most interesting finding is that the above interstitial related defects can be eliminated completely with Ti silicidation, apparently a result of vacancy injection. However the silicidation process itself introduces a new H2 (0.30 eV) level, albeit at much lower concentration. This same H2 level is also seen in unimplanted samples under RTP. The paper will present details of defect evolution under various conditions of RTP for samples with and without the self-implantation and silicidation.

SIMS STUDY OF SILICON OXYNITRIDE RAPID THERMALLY GROWN IN NITRIC OXIDE

Surface Review and Letters ◽

10.1142/s0218625x01001452 ◽

2001 ◽

Vol 08 (05) ◽

pp. 569-573

Author(s):

R. LIU ◽

K. H. KOA ◽

A. T. S. WEE ◽

W. H. LAI ◽

M. F. LI ◽

...

Keyword(s):

Thermal Processing ◽

Depth Distribution ◽

Gate Dielectric ◽

State Of The Art ◽

Growth Characteristics ◽

Silicon Oxynitride ◽

Mos Devices ◽

As the gate dielectric for ULSI MOS devices scales in the ultrathin regime, it is fabricated increasingly with silicon oxynitride instead of silicon dioxide films. One way to obtain silicon oxynitride films is the rapid thermal oxidation of silicon in NO (RTNO). Earlier RTNO growth studies were not sufficiently comprehensive as well as limited by temperature uncertainty and nonuniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, RTNO growth characteristics at oxidation pressures of 100 and 760 Torr, oxidation temperatures from 900 to 1200°C and oxidation times from 0 to 480 s were obtained and investigated. Anomalies in the growth characteristics were observed. It was also demonstrated that secondary ion mass spectrometry (SIMS) using the MCs + method could be used to accurately determine the depth distribution of N in ultrathin silicon oxynitride films.

Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

Journal of Electronic Materials ◽

10.1007/s11664-016-4769-x ◽

2016 ◽

Vol 45 (11) ◽

pp. 5621-5625 ◽

Cited By ~ 2

Author(s):

Y. Kouhlane ◽

D. Bouhafs ◽

N. Khelifati ◽

S. Belhousse ◽

H. Menari ◽

...

Keyword(s):

Thermal Processing ◽

Carrier Lifetime ◽

Type Silicon ◽

P Type

Low Temperature Ni-Al Ohmic Contacts to p-Type 4H-SiC Using Semi-Salicide Processing

Materials Science Forum ◽

10.4028/www.scientific.net/msf.924.389 ◽

2018 ◽

Vol 924 ◽

pp. 389-392 ◽

Cited By ~ 4

Author(s):

Mattias Ekström ◽

Shuoben Hou ◽

Hossein Elahipanah ◽

Arash Salemi ◽

Mikael Östling ◽

...

Keyword(s):

Low Temperature ◽

Ohmic Contact ◽

Thermal Processing ◽

Ohmic Contacts ◽

Nickel Silicide ◽

Second Step ◽

Low Resistance ◽

Annealing Step ◽

P Type

Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C.

Heavy Phosphorus Implantation of Ge0.83Si0.17 Epitaxial Layers

MRS Proceedings ◽

10.1557/proc-45-103 ◽

1985 ◽

Vol 45 ◽

Author(s):

J.C. Bean ◽

A.T. Fiory ◽

L.C. Hopkins

Keyword(s):

Thermal Processing ◽

Electrical Transport ◽

Room Temperature ◽

Molecular Beam ◽

Solid Phase ◽

Electrical Activation ◽

Temperature Dependent ◽

ABSTRACTEpitaxial Ge-Si alloy films were grown on Si(100) by molecular beam epitaxy, subsequently given a shallow P implant, and subjected to rapid thermal processing. Heat treatment causes solid-phase epitaxial regrowth of the amorphized implanted layer similar to the case of pure Ge. Phosphorus redistribution, loss, and trapping at the Ge-Si/Si interface are also observed. Anomalous electrical activation is observed for P concentrations below 1 at.%, where the-carriers are either trapped or compensated at room temperature, but not below 100K. Analyses were carried out by Rutherford backscattering and channeling, secondary ion mass spectrometry, and temperature-dependent electrical transport.

Ultra-Shallow Diffused Emitter-Base Profiles Fabricated by Rapid Thermal Processing for High Speed Bipolar Devices

MRS Proceedings ◽

10.1557/proc-146-365 ◽

1989 ◽

Vol 146 ◽

Cited By ~ 2

Author(s):

J. E. Urner ◽

C. I. Drowley ◽

P. Vande Voorde ◽

A. Kermani

Keyword(s):

Thermal Processing ◽

High Speed ◽

Boron Concentration ◽

Depth Resolution ◽

Device Fabrication ◽

Bipolar Devices ◽

Polysilicon Emitter ◽

ABSTRACTThe development of next-generation high-speed bipolar devices depends critically on reproducible shallow dopant profiles, with base and emitter widths considerably less than 1000 Angstroms. Sequential diffusion of boron and arsenic from implanted polysilicon is a promising means of producing such shallow emitter-base profiles. The restricted thermal budget required to reproducibly form such shallow junctions severely limits the use of conventional furnaces. We report the formation of extremely shallow emitter-base profiles using rapid thermal processing (RTP) in a double-diffused polysilicon emitter process. Polysilicon was implanted with various doses of BF2 and subjected to a conventional furnace anneal at 900ºC. This process was followed by As implantation and furnace anneal at 900ºC or RTP at 10500C or 1100ºC. A range of emitter-base profiles was generated with emitter and base widths ranging from 350-800A. Emitter-base profiles were measured using low-energy Secondary Ion Mass Spectrometry (SIMS), after removal of the polysilicon to improve depth resolution. Deconvolution of the instrumental broadening function allowed extraction of base and emitter widths as well as the boron concentration in the base. Variation of the profiles is discussed as a function of anneal times and implant dose. Modified SUPREM III parameters are obtained for diffusivities under these RTP conditions. The implications for high speed bipolar device fabrication will be presented.

Phosphorus Gettering by Rapid Thermal Processing

MRS Proceedings ◽

10.1557/proc-262-987 ◽

1992 ◽

Vol 262 ◽

Author(s):

Ecuchaib Hartiti ◽

Abdelilah Slaoui ◽

Jean-Claude Muller ◽

Paul Siffert

Keyword(s):

Thermal Processing ◽

Carrier Transport ◽

Diffusion Length ◽

Time Duration ◽

Silicon Devices ◽

Coated Film ◽

Electron Diffusion Length ◽

Rapid Thermal Diffusion ◽

P Type

ABSTRACTWe have investigated the rapid thermal diffusion of phosphorus into p-type silicon from a spin-on coated film as a function of the process temperature and time duration. The electron diffusion length LD measurements performed by the Surface PhotoVoltage (SPV) method present evidence for a get-tering phenomena since the LD values of the diffused samples are significantly improved. This result is important for the future of RTP in the area of silicon devices where carrier transport is controlled by the bulk lifetime.

Sb-Doped Polycrystalline Si Obtained by Means of Sb and Si Thin-Film Reactions

MRS Proceedings ◽

10.1557/proc-106-193 ◽

1987 ◽

Vol 106 ◽

Author(s):

S. F. Gong ◽

A. E. Robertsson ◽

S.-E. Hörnström ◽

G. Radnoczi ◽

H. T. G. Hentzell

Keyword(s):

Thin Film ◽

Electron Spectroscopy ◽

Si Substrate ◽

Transmission Electron ◽

Diffusion Source ◽

Amorphous Si ◽

P Type ◽

ABSTRACTWe have grown Sb-doped poly-Si by thin-film reactions between Sb and amorphous Si (a-Si). The reactions and microstructures of the films were investigated by transmission electron microscopy (TEM) during in situ annealing and Auger electron spectroscopy (AES). The reactions either resulted in an amorphous Sb-Si (a-Sb-Si) alloy or caused crystallization of a-Si at low temperatures, depending on the film thickness of the a-Si layer as well as the heating rate. The electrical properties of the as-deposited and the annealed thin multi-layers deposited on SiO2 layer were determined using Hall measurements. After annealing at 1375 K for 60 minutes, Sb-doped poly-Si with a resistivity of 1.4×10−2 ohm-cm was obtained. A p-n junction was formed in a p-type Si substrate by using an a-Si/Sb/a-Si multi-layer as a diffusion source. The doping concentration in the Si substrate was obtained using secondary ion mass spectrometry (SIMS).