Contactless Measurements of Slip Lines Intentionally Introduced in Si Wafers During Rapid Thermal Processing

1991 ◽  
Vol 224 ◽  
Author(s):  
A. Usami ◽  
H. Shiraki ◽  
H. Fujiwara ◽  
R. Abe ◽  
N. Osamura ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Signal Intensity ◽  
Carrier Lifetime ◽  
Temperature Drop ◽  
Rapid Thermal Processing ◽  
X Ray ◽  
Slip Lines ◽  
Recombination Centers ◽  
Microwave Probe ◽  
Good Agreement

AbstractThe slip lines introduced in Si wafers during rapid thermal processing (RTP) were revealed with focused reflectance microwave probe (RMP) method. The signal intensity of RMP which is related to optically injected excess carrier concentration decreases at slip lines. The region in which the signal intensity decreased is in good agreement with results of X-ray topography and theoretical analysis considering thermal stress caused by temperature drop at the wafer periphery during RTP. According these results, it is considered that carrier lifetime is decreased by slip dislocations which are effective recombination centers.

Spatial Inhomogeneities in Rapidly Thermal-Processed GaAs Wafer

1989 ◽  
Vol 146 ◽  
Author(s):  
A. Usami ◽  
A. Kitagawa ◽  
T. Wada
Keyword(s):  
Thermal Processing ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Contactless Measurement ◽  
X Ray ◽  
Gaas Wafer ◽  
Symmetrical Distribution ◽  
Crystallographic Slip ◽  
Insulating Liquid ◽  
Microwave Probe

ABSTRACTThe spatial distributions of the midgap defect (EL2) concentration in semi-insulating liquid-encapsulated Czochralski GaAs wafers have been characterized by the contactless measurement of the optically injected carrier using reflectance microwave probe (RMP) method. The four-fold symmetrical distribution of EL2 in the (100) plane is observed in the 2 inch diameter GaAs wafer after rapid thermal processing(RTP). The deep level distribution in the RTP wafer corresponds to the crystallographic slip generation pattern obtained from x-ray topography. The correlation between the pattern of the redistributed EL2 concentration and the slip generation in the RTP wafer is suggested that the EL2 is produced by the large thermal stress during RTP. Furthermore, the distributions of EL2 center measured by the RMP method are compared with the dislocation patterns in undoped and In-doped GaAs wafers.

Novel Multilayer Process for CuInSe2 Thin Film Formation by Rapid Thermal Processing

1997 ◽  
Vol 485 ◽  
Author(s):  
Chih-hung Chang ◽  
Billy Stanbery ◽  
Augusto Morrone ◽  
Albert Davydov ◽  
Tim Anderson
Keyword(s):  
Thermal Processing ◽  
Physical Vapor Deposition ◽  
Film Formation ◽  
Rapid Thermal Processing ◽  
Precursor Film ◽  
Bilayer Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Cuinse2 Thin Film

AbstractCuInSe2 thin films have been synthesized from binary precursors by Rapid Thermal Processing (RTP) at a set-point temperature of 290°C for 70 s. With appropriate processing conditions no detrimental Cu2-xSe phase was detected in the CIS films. The novel binary precursor approach consisted of a bilayer structure of In-Se and Cu-Se compounds. This bilayer structure was deposited by migration enhanced physical vapor deposition at a low temperature (200°C) and the influence of deposition parameters on the precursor film composition was determined. The bilayer structure was then processed by RTP and characterized for constitution by X-ray diffraction and for composition by Wavelength Dispersive X-ray Spectroscopy.

Preparation of CIGSS Thin-Film Solar Cells by Rapid Thermal Processing

2006 ◽  
Vol 129 (3) ◽  
pp. 323-326
Author(s):  
Sachin S. Kulkarni ◽  
Jyoti S. Shirolikar ◽  
Neelkanth G. Dhere
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Soda Lime ◽  
Thin Film Solar Cells ◽  
Soda Lime Glass ◽  
X Ray

Rapid thermal processing (RTP) provides a way to rapidly heat substrates to an elevated temperature to perform relatively short duration processes, typically less than 2–3min long. RTP can be utilized to minimize the process cycle time without compromising process uniformity, thus eliminating a bottleneck in CuIn1−xGaxSe2−ySy (CIGSS) module fabrication. Some approaches have been able to realize solar cells with conversion efficiencies close or equal to those for conventionally processed solar cells with similar device structures. A RTP reactor for preparation of CIGSS thin films on 10cm×10cm substrates has been designed, assembled, and tested at the Florida Solar Energy Center’s PV Materials Lab. This paper describes the synthesis and characterization of CIGSS thin-film solar cells by the RTP technique. Materials characterization of these films was done by scanning electron microscopy, x-ray energy dispersive spectroscopy, x-ray diffraction, Auger electron spectroscopy, electron probe microanalysis, and electrical characterization was done by current–voltage measurements on soda lime glass substrates by the RTP technique. Encouraging results were obtained during the first few experimental sets, demonstrating that reasonable solar cell efficiencies (up to 9%) can be achieved with relatively shorter cycle times, lower thermal budgets, and without using toxic gases.

Slip Free Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
Julian Blake ◽  
Jeffrey C. Gelpey ◽  
John F. Moquin ◽  
James Schlueter ◽  
Ron Capodilupo
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Primary Concern ◽  
Differential Interference Contrast Microscopy ◽  
X Ray ◽  
Contrast Microscopy ◽  
Interference Contrast Microscopy ◽  
Wafer Size ◽  
Edge Damage ◽  
Dc Arc

ABSTRACTSlip is a primary concern in Rapid Thermal Processing (RTP). Diagnostics for slip are compared, including: visual inspection, differential interference contrast microscopy (Nomarski), X-ray topography, decorative etching and optical surface scanning. Data from each technique are presented. RTP control parameters (temperature uniformity, heat up and cool down rates, edge cooling) and substrate parameters (wafer size, oxygen content, edge damage) which may have an effect on slip are discussed. Typical results for implant annealing sequences on a water-wall DC arc lamp RTP system are presented and used to suggest techniques for process optimization.

Rapid thermal processing chamber for in-situ x-ray diffraction

2015 ◽  
Vol 86 (1) ◽  
pp. 013902 ◽  
Author(s):  
Md. Imteyaz Ahmad ◽  
Douglas G. Van Campen ◽  
Jeremy D. Fields ◽  
Jiafan Yu ◽  
Vanessa L. Pool ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
X Ray Diffraction ◽  
X Ray

Investigation of Metal Induced Surface Defects in Czochralski Si Following Rapid Thermal Processing by Thermal Wave Modulated Reflectance Method

1991 ◽  
Vol 224 ◽  
Author(s):  
S. Hahn ◽  
W.L Smith ◽  
H. Suga ◽  
J.-G. Park ◽  
C.-S. Lim ◽  
...  
Keyword(s):  
Thermal Wave ◽  
Thermal Processing ◽  
Surface Defects ◽  
Imaging Techniques ◽  
Rapid Thermal Processing ◽  
X Ray ◽  
Transmission Electron ◽  
Metal Silicides ◽  
X Ray Imaging ◽  
Crystallographic Defects

AbstractUsing thermal wave mapping and imaging techniques in conjunction with x-ray transmission topography and transmission electron microscopy, precipitation behavior of various fast and slowly diffusing metallic impurities such as Au, Co, Cu, Fe, Mo, Ni, Pd, Pt, W and Zn in Czochralski Si following rapid thermal processing are investigated. Our data have shown that thermal wave signal is sensitive to certain types of metal-induced surface defects (most likely metal silicides) and associated crystallographic defects. In addition, the comparison between thermal wave and x-ray imaging methods shows an interesting speciesdependent complimentary relationship.

X-ray investigation of quantum well intermixing after postgrowth rapid thermal processing

2005 ◽  
Vol 38 (10A) ◽  
pp. A132-A136 ◽  
Author(s):  
T Roch ◽  
C Pflügl ◽  
A M Andrews ◽  
W Schrenk ◽  
G Strasser
Keyword(s):  
Quantum Well ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Quantum Well Intermixing ◽  
X Ray

Oxidation Resistance of Ultrathin Silicon Nitride Passivation Layers on Si(100)

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Kamath ◽  
B. Y. Kim ◽  
P. M. Blass ◽  
Y. M. Sun ◽  
J. M. White ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Oxidation Resistance ◽  
Photoelectron Spectroscopy ◽  
Thermal Processing ◽  
Oxidation Process ◽  
Rapid Thermal Processing ◽  
Tantalum Pentoxide ◽  
Process Window ◽  
X Ray ◽  
Passivation Layers

ABSTRACTThe oxidation resistance of ultrathin (5–15Å) thermally grown silicon nitride (Si3N4), in conditions relevant to the deposition/annealing of Tantalum Pentoxide (Ta2O5) in a Rapid Thermal Processing (RTP) environment, has been non destructively examined using X-Ray Photoelectron Spectroscopy (XPS). This has been carried out with a view to establishing a process window for the deposition of Ta2O5 on a Rapid Thermally Nitrided (RTN) Si(100) surface, with negligible oxidation of the Si(100) substrate. A physical model of the oxidation process of these films is also proposed.

Effect of Post-Annealing Treatment on the Structure and Luminescence Properties of AIN:Tb3+ Thin Films Prepared by Radio Frequency Magnetron Sputtering

2017 ◽  
Vol 890 ◽  
pp. 299-302 ◽  
Author(s):  
Karem Yoli Tucto Salinas ◽  
Loreleyn F. Flores Escalante ◽  
Jorge Andrés Guerra Torres ◽  
Rolf Grieseler ◽  
Thomas Kups ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Radio Frequency Magnetron ◽  
Luminescence Properties ◽  
Aluminum Oxynitride ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray

Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission.

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