Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

Journal of Electronic Materials ◽

10.1007/s11664-017-5937-3 ◽

2017 ◽

Vol 47 (2) ◽

pp. 910-916 ◽

Author(s):

M. Marx ◽

A. Grundmann ◽

Y.-R. Lin ◽

D. Andrzejewski ◽

T. Kümmell ◽

...

Keyword(s):

Vapor Phase ◽

Growth Parameters ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Two Dimensional

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RETRACTED: High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2012.12.030 ◽

2013 ◽

Vol 366 ◽

pp. 35-38 ◽

Author(s):

Yuantao Zhang ◽

Xin Dong ◽

Guoxing Li ◽

Wancheng Li ◽

Baolin Zhang ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Two Dimensional ◽

High Quality ◽

Dimensional Growth

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Properties of the two‐dimensional electron gas in modulation‐doped GaInAs(P)/InP structures grown by low‐pressure metalorganic vapor‐phase epitaxy

Journal of Applied Physics ◽

10.1063/1.343540 ◽

1989 ◽

Vol 66 (2) ◽

pp. 697-703 ◽

Author(s):

D. Grützmacher ◽

R. Meyer ◽

P. Balk ◽

C. Berg ◽

T. Schäpers ◽

...

Keyword(s):

Vapor Phase ◽

Electron Gas ◽

Low Pressure ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas

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Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2012.05.004 ◽

2012 ◽

Vol 353 (1) ◽

pp. 108-114 ◽

Author(s):

P. Vennéguès ◽

B.S. Diaby ◽

H. Kim-Chauveau ◽

L. Bodiou ◽

H.P.D. Schenk ◽

...

Keyword(s):

Layer Thickness ◽

Vapor Phase ◽

Growth Parameters ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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Study of the two‐dimensional–three‐dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum‐sized structures

Applied Physics Letters ◽

10.1063/1.112447 ◽

1994 ◽

Vol 65 (24) ◽

pp. 3093-3095 ◽

Author(s):

N. Carlsson ◽

W. Seifert ◽

A. Petersson ◽

P. Castrillo ◽

M. E. Pistol ◽

...

Keyword(s):

Vapor Phase ◽

Three Dimensional ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Growth Mode ◽

Mode Transition ◽

Two Dimensional ◽

Dimensional Growth

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Retraction notice to “High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy” [Journal of Crystal Growth, 366 (2013) 35-38]

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2018.09.044 ◽

2018 ◽

Vol 503 ◽

pp. 65

Author(s):

Yuantao Zhang ◽

Xin Dong ◽

Guoxing Li ◽

Wancheng Li ◽

Baolin Zhang ◽

...

Keyword(s):

Crystal Growth ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Two Dimensional ◽

High Quality ◽

Dimensional Growth ◽

Retraction Notice

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The effects of growth temperature on the dimethyl‐Cd doping of GaAs by metalorganic vapor‐phase epitaxy: Evidence of impurity‐induced nucleation of two‐dimensional clusters

Journal of Applied Physics ◽

10.1063/1.343372 ◽

1989 ◽

Vol 65 (10) ◽

pp. 3849-3851 ◽

Author(s):

Koh Matsumoto ◽

Junnich Hidaka ◽

Kazuo Uchida

Keyword(s):

Vapor Phase ◽

Growth Temperature ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Two Dimensional ◽

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Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor‐phase epitaxy

Applied Physics Letters ◽

10.1063/1.1697645 ◽

2004 ◽

Vol 84 (14) ◽

pp. 2664-2666 ◽

Author(s):

Premila Mohan ◽

Junichi Motohisa ◽

Takashi Fukui

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Two Dimensional ◽

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Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2007.07.024 ◽

2007 ◽

Vol 308 (1) ◽

pp. 170-175 ◽

Author(s):

S. Heinze ◽

A. Krtschil ◽

J. Bläsing ◽

T. Hempel ◽

P. Veit ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Growth Mode ◽

Two Dimensional ◽

Homoepitaxial Growth ◽

Dimensional Growth

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Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

Crystal Growth & Design ◽

10.1021/acs.cgd.6b00398 ◽

2016 ◽

Vol 16 (6) ◽

pp. 3409-3415 ◽

Author(s):

Xin Li ◽

Suresh Sundaram ◽

Youssef El Gmili ◽

Taha Ayari ◽

Renaud Puybaret ◽

...

Keyword(s):

Boron Nitride ◽

Vapor Phase ◽

Hexagonal Boron Nitride ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Two Dimensional ◽

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The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)00476-x ◽

1998 ◽

Vol 193 (1-2) ◽

pp. 23-27 ◽

Author(s):

Xianglin Liu ◽

Da-Cheng Lu ◽

Lianshan Wang ◽

Xiaohui Wang ◽

Du Wang ◽

...

Keyword(s):

Growth Rate ◽

Buffer Layer ◽

Vapor Phase ◽

Growth Parameters ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Gan Buffer Layer

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