Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode

2007 ◽  
Vol 308 (1) ◽  
pp. 170-175 ◽  
Author(s):  
S. Heinze ◽  
A. Krtschil ◽  
J. Bläsing ◽  
T. Hempel ◽  
P. Veit ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Growth Mode ◽  
Two Dimensional ◽  
Homoepitaxial Growth ◽  
Dimensional Growth

RETRACTED: High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy

2013 ◽  
Vol 366 ◽  
pp. 35-38 ◽  
Author(s):  
Yuantao Zhang ◽  
Xin Dong ◽  
Guoxing Li ◽  
Wancheng Li ◽  
Baolin Zhang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Two Dimensional ◽  
High Quality ◽  
Dimensional Growth

scholarly journals Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

2017 ◽  
Vol 47 (2) ◽  
pp. 910-916 ◽  
Author(s):  
M. Marx ◽  
A. Grundmann ◽  
Y.-R. Lin ◽  
D. Andrzejewski ◽  
T. Kümmell ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Parameters ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Two Dimensional

The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy

1998 ◽  
Vol 73 (9) ◽  
pp. 1278-1280 ◽  
Author(s):  
S. Haffouz ◽  
H. Lahrèche ◽  
P. Vennéguès ◽  
P. de Mierry ◽  
B. Beaumont ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Growth Mode ◽  
Sapphire Surface ◽  
N Treatment

Homoepitaxial growth of AlN layers using by metalorganic vapor phase epitaxy on freestanding AlN substrate

2014 ◽  
Author(s):  
Tomohiro Morishita ◽  
Motoaki Iwaya ◽  
Tetsuya Takeuchi ◽  
Satoshi Kamiyama ◽  
Isamu Akasaki
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Homoepitaxial Growth
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