Composition Dependence of the Band Gap Energy of the Sb-Rich GaBixSb1−x Alloy (0 ≤ x ≤ 0.26) Described by the Modified Band Anticrossing Model

2019 ◽  
Vol 48 (3) ◽  
pp. 1599-1603 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Xiang-Tan Li ◽  
Xiao-Dong Sun ◽  
Sha-Sha Wang ◽  
Jun Wang
Keyword(s):  
Band Gap ◽  
Composition Dependence ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Band Anticrossing

Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model

1999 ◽  
Vol 595 ◽  
Author(s):  
J. Wagner ◽  
A. Ramakrishnan ◽  
H. Obloh ◽  
M. Kunzer ◽  
K. Köhler ◽  
...  
Keyword(s):  
Band Gap ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Composition Dependence ◽  
Band Gap Energy ◽  
Function Model ◽  
Gap Energy ◽  
The Individual ◽  
Gap Data

AbstractSpectroscopic ellipsometry (SE) has been used for the characterization of AlGaN/GaN and InGaN/GaN heterostructures. The resulting pseudodielectric function spectra were analyzed using a multilayer approach, describing the dielectric functions of the individual layers by a parametric oscillator model. From this analysis, the dielectric function spectra of GaN, AlxGa1−xN (x≤0.16), and In0.13Ga0.87N were deduced. Further, the dependence of the AlxGa1−xN band gap energy on the Al mole fraction was derived and compared with photoluminescence data recorded on the same material. The SE band gap data are compatible with a bowing parameter close to 1 eV for the composition dependence of the AlxGa1−xN gap energy. Finally, the parametric dielectric functions have been used to model the pseudodielectric function spectrum of a complete GaN/AlGaN/InGaN LED structure.

Isotope composition dependence of the band-gap energy in diamond

2013 ◽  
Vol 88 (20) ◽  
Author(s):  
H. Watanabe ◽  
T. Koretsune ◽  
S. Nakashima ◽  
S. Saito ◽  
S. Shikata
Keyword(s):  
Band Gap ◽  
Composition Dependence ◽  
Isotope Composition ◽  
Band Gap Energy ◽  
Gap Energy

Composition dependence of the band gap energy for the dilute nitride and As-rich GaNxSbyAs1−x−y (0≤x≤0.05, 0≤y≤0.3)

2016 ◽  
Vol 485 ◽  
pp. 35-38 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Heng-Fei Guo ◽  
Tong Wei ◽  
Sha-Sha Wang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Composition Dependence ◽  
Band Gap Energy ◽  
Dilute Nitride ◽  
Gap Energy

scholarly journals Composition Dependence of the Band Gap Energy of InxGa1−xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition

1999 ◽  
Vol 4 (S1) ◽  
pp. 106-111 ◽  
Author(s):  
J. Wagner ◽  
A. Ramakrishnan ◽  
D. Behr ◽  
M. Maier ◽  
N. Herres ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Composition Dependence ◽  
Chemical Vapor ◽  
Band Gap Energy ◽  
Organic Chemical ◽  
Gap Energy ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We report on the composition dependence of the band gap energy of strained hexagonal InxGa1−xN layers on GaN with x≤0.15, grown by metal-organic chemical vapor deposition on sapphire substrates. The composition of the (InGa)N was determined by secondary ion mass spectroscopy. High-resolution X-ray diffraction measurements confirmed that the (InGa)N layers with typical thicknesses of 30 nm are pseudomorphically strained to the in-plane lattice parameter of the underlying GaN. Room-temperature photoreflection spectroscopy and spectroscopic ellipsometry were used to determine the (InGa)N band gap energy. The composition dependence of the band gap energy of the strained (InGa)N layers was found to be given by EG(x)=3.43−3.28 × (eV) for x≤0.15. When correcting for the strain induced shift of the fundamental energy gap, a bowing parameter of 3.2 eV was obtained for the composition dependence of the gap energy of unstrained (InGa)N.

scholarly journals Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model

2000 ◽  
Vol 5 (S1) ◽  
pp. 775-781
Author(s):  
J. Wagner ◽  
A. Ramakrishnan ◽  
H. Obloh ◽  
M. Kunzer ◽  
K. Köhler ◽  
...  
Keyword(s):  
Band Gap ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Composition Dependence ◽  
Band Gap Energy ◽  
Function Model ◽  
Gap Energy ◽  
The Individual ◽  
Gap Data

Spectroscopic ellipsometry (SE) has been used for the characterization of AlGaN/GaN and InGaN/GaN heterostructures. The resulting pseudodielectric function spectra were analyzed using a multilayer approach, describing the dielectric functions of the individual layers by a parametric oscillator model. From this analysis, the dielectric function spectra of GaN, AlxGa1−xN (x≤0.16), and In0.13Ga0.87N were deduced. Further, the dependence of the AlxGa1−xN band gap energy on the Al mole fraction was derived and compared with photoluminescence data recorded on the same material. The SE band gap data are compatible with a bowing parameter close to 1 eV for the composition dependence of the AlxGa1−xN gap energy. Finally, the parametric dielectric functions have been used to model the pseudodielectric function spectrum of a complete GaN/AlGaN/InGaN LED structure.

scholarly journals Valence Band Structure ofInAs1-xBixandInSb1-xBixAlloy Semiconductors Calculated Using Valence Band Anticrossing Model

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
D. P. Samajdar ◽  
S. Dhar
Keyword(s):  
Experimental Data ◽  
Band Gap ◽  
Valence Band ◽  
Band Gap Energy ◽  
Light Hole ◽  
Spin Orbit ◽  
Valence Band Structure ◽  
Gap Energy ◽  
Valence Band Anticrossing ◽  
Band Anticrossing

The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies inInAs1-xBixandInSb1-xBixalloy systems. It is found that both the heavy/light hole, and spin-orbit splitE+levels move upwards in energy with an increase in Bi content in the alloy, whereas the splitE−energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

The Composition Dependence of the Band Gap Energy for the O-Rich ZnSexO1−x

2018 ◽  
Vol 47 (7) ◽  
pp. 3897-3901 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Tong Wei ◽  
Xiao-Dong Sun ◽  
Sha-Sha Wang ◽  
Jun Wang
Keyword(s):  
Band Gap ◽  
Composition Dependence ◽  
Band Gap Energy ◽  
Gap Energy

Composition Dependence of the Band Gap Energy of InxGal-xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition

1998 ◽  
Vol 537 ◽  
Author(s):  
J. Wagner ◽  
A. Ramakrishnan ◽  
D. Behr ◽  
M. Maier ◽  
N. Herres ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Composition Dependence ◽  
Chemical Vapor ◽  
Band Gap Energy ◽  
Organic Chemical ◽  
Gap Energy ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractWe report on the composition dependence of the band gap energy of strained hexagonal InGal-,N layers on GaN with x≤0.15, grown by metal-organic chemical vapor deposition on sapphire substrates. The composition of the (InGa)N was determined by secondary ion mass spectroscopy. High-resolution X-ray diffraction measurements confirmed that the (InGa)N layers with typical thicknesses of 30 nm are pseudomorphically strained to the in-plane lattice parameter of the underlying GaN. Room-temperature photoreflection spectroscopy and spectroscopic ellipsometry were used to determine the (InGa)N band gap energy. The composition dependence of the band gap energy of the strained (InGa)N layers was found to be given by EG(x)=3.43-3.28.x (eV) for x≤0.15. When correcting for the strain induced shift of the fundamental energy gap, a bowing parameter of 3.2 eV was obtained for the composition dependence of the gap energy of unstrained (InGa)N.

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