The propagation of waves in thin-film ferroelectric materials

Pramana ◽  
2019 ◽  
Vol 93 (2) ◽  
Author(s):  
Abbagari Souleymanou ◽  
Khalid K Ali ◽  
Hadi Rezazadeh ◽  
Mostafa Eslami ◽  
Mohammad Mirzazadeh ◽  
...  
2019 ◽  
Author(s):  
Jose J Plata ◽  
Javier Amaya Suárez ◽  
Santiago Cuesta-López ◽  
Antonio Marquez ◽  
Javier Fdez. Sanz

<div> <div> <div> <p>Conventional solar cell efficiency is usually limited by the Shockley-Queisser limit. This is not the case, however, for ferroelectric materials, which present a spontaneous electric polarization that is responsible for their bulk photovoltaic effect. Even so, most ferroelectric oxides exhibit large band gaps, reducing the amount of solar energy that can be harvested. In this work, a high-throughput approach to tune the electronic properties of thin-film ferroelectric oxides is presented. Materials databases were systematically used to find substrates for the epitaxial growth of KNbO3 thin-films, using topological and stability filters. Interface models were built and their electronic and optical properties were predicted. Strain and substrate-thin-film band interaction effects were examined in detail, in order to understand the interaction between both materials. We found substrates that significantly reduce the KNbO3 band gap, maintain KNbO3 polarization, and potentially present the right band alignment, favoring the electron injection in the substrate/electrode. This methodology can be easily applied to other ferroelectric oxides, optimizing their band gaps and accelerating the development of new ferroelectric-based solar cells. </p> </div> </div> </div>


1990 ◽  
Vol 200 ◽  
Author(s):  
Hideaki Adachi ◽  
Kiyotaka Wasa

ABSTRACTThin film process for ferroelectric perovskite oxides has been investigated. Amorphous, polycrystal, and epitaxial thin films of Pb-based perovskite ferroelectrics were prepared by rf-magnetron sputtering, and their properties were discussed. Epitaxial PLZT thin films showed similar dielectric properties as PLZT bulk ceramics and also showed strong electrooptic effect. For further investigation, film preparation process was developed by multitarget sputtering and quaternary PLZT thin film with excellent epitaxial crystallinity was realized by using a graded composition layer.


2000 ◽  
Author(s):  
Michael A. Todd ◽  
Paul A. Manning ◽  
Paul P. Donohue ◽  
Alan G. Brown ◽  
Rex Watton

Author(s):  
Galina Victorovna Chucheva ◽  
◽  
Mikhail Sergeеvich Afanas’ev ◽  
Ilya Andreevich Anisimov ◽  
Anastasiya Igorevna Georgieva ◽  
...  

2021 ◽  
Author(s):  
Paramjit Kour ◽  
Sudipta Kishore Pradhan

The spectrums of properties exhibited by ferroelectric materials are dielectric, ferroelectric, piezoelectric and pyroelectric effect. This is the makes these materials to have a wide range of useful application. Infrared detectors are used pyroelectric effect of ferroelectric materials. It is used in nonvolatile memories due to have ferroelectric hysteresis. Its piezoelectric properties make them useful for actuator, radio frequency filter, sensor, and transducer. Ferroelectric capacitors are used, their good dielectric behavior. According to the necessity of the system they are available in different form such as single crystals, ceramics, thin film, and polymer, composite. The diversity of properties ferroelectric materials always attracted the attention of engineers and researchers. Size reduction of this material from micro to nanoscale established an enormous consideration to develop nanotechnology. Its vast use of different filed imposed the in detail research in adding to the development of processing and characterization method. This chapter will put some light on some fundamental principle of ferroelectricity, the list of perovskite materials and their application.


2021 ◽  
Vol 30 (9) ◽  
pp. 16-23
Author(s):  
Min Hyuk PARK

Ferroelectric memories have been studied for ∼60 years since their first suggestion in 1952. The material properties of ferroelectrics are considered ideal for universal memories with the availability of electrical program/erase and read processes. However, challenges in the physical scaling down of bulk ferroelectric materials were a critical hurdle for the success of ferroelectric materials. In 2011, ferroelectricity in HfO2-based thin film was first reported, and this unexpected discovery revived research on ferroelectric memories. In this review, the properties, history, and applications of HfO2-based ferroelectrics are reviewed, and a perspective on semiconductor devices based on them is provided.


1996 ◽  
Vol 433 ◽  
Author(s):  
J.T. Dawley ◽  
G. Teowee ◽  
B.J.J. Zelinski ◽  
D.R. Uhlmann

AbstractIn this study, the use of a fiber optic technique for the measurement of the piezoelectric properties of ferroelectric bulk and thin film samples was investigated. The strain and piezoelectric properties (namely the d33 coefficients) were measured using the MTI-2000 Fotonic Sensor, which uses the principle of the optical lever to resolve very small changes in sample displacement (1 Å). Using this technique, we were able to detect the very small strains associated with the converse piezoelectric effect for PVDF films and bulk PZT samples, and correlate the results with data acquired from direct piezoelectric effect measurement. Comparison of the data sets prove that the optical lever would be a useful optical technique for measuring of the d33 values of ceramic thin films, such as BaTiO3, ZnO, and PZT.


MRS Bulletin ◽  
1992 ◽  
Vol 17 (2) ◽  
pp. 44-53 ◽  
Author(s):  
Catherine M. Cotell ◽  
Kenneth S. Grabowski

The successful use of pulsed laser deposition (PLD) to fabricate thin film superconductors has generated interest in using the technique to deposit thin films of other materials. The compositional fidelity between laser target and deposited film and the ability to deposit films in reactive gas environments make the PLD process particularly well suited to the deposition of complex multicomponent materials. Cheung and Sankur recently provided an excellent review of the PLD field, including a table of over 100 elements, inorganic and organic compounds, andsuperlattices that have been laser evaporated. Over 75 of these materials were deposited as thin films.The goal of this article is to provide an introduction to some of the newer applications of PLD for thin film fabrication. Four classes of materials are highlighted: ferroelectrics, bioceramics, ferrites, and tribological materials. Ferroelectric materials are structurally related to the high-temperature superconducting oxides and therefore are a direct extension of the recent superconducting oxide work. Bioceramics are dissimilar in structure and application to both ferroelectrics and superconducting oxides, but they are complex multicomponent oxides and, therefore, benefit from the use of PLD. Ferrites, also complex, multicomponent oxides, represent another exciting, but only lightly explored opportunity for PLD. In contrast, tribological materials are typically neither complex nor multicomponent. Nevertheless, interesting structures and properties have been produced by PLD. A few of the more important ones will be discussed. These different types of materials demonstrate the diversity of capabilities offered by PLD.


2003 ◽  
Vol 784 ◽  
Author(s):  
Tingkai Li ◽  
Sheng Teng Hsu ◽  
Bruce Ulrich ◽  
Dave Evans

ABSTRACTFor the high density FeRAM applications, the integration process-induces damages such as etching damage that degrades the properties of FRAM devices and the high surface roughness of ferroelectric thin film that results in the difficulty for alignment are critical issues. In order to solve these problems, selective deposition process is developed to simplify the integration processes and improve the properties of FeRAM memory devices. Based on the differential deposition rates of ferroelectric materials on high-k oxide and silicon dioxide, we can selectively deposit a c-axis oriented PGO thin film on the patterned high-k oxide such as ZrOx (x=0–2), HfOx (x=0–2), TiO2, and their mixtures other than on SiO2. By patterning the high-k dielectric, the PGO deposition is limited to just the preferred pattern high-k area. SEM, EDX and x-ray measurements further confirm that the c-axis oriented PGO thin films are selectively deposited on the high-k gate oxide other than on the field SiO2 including alignment mark area, which will eliminate the roughness problem for the alignments. Also the etching damage is eliminated since there is no need to etch the PGO film, which improved the properties of FeRAM devices.


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