Effect of Copper-Based Spring Alloy Selection on Arc Erosion of Electrical Contacts in a Miniature Electrical Switch

Author(s):  
Seulki Hwang ◽  
Daesup Hwang ◽  
Hani Baek ◽  
Chansun Shin
2020 ◽  
Vol 62 (4) ◽  
pp. 401-407
Author(s):  
Ramazan Karslioglu ◽  
Lujain Al-Falahi

Abstract Silver and silver(Ag)-graphene(Gr) nanocomposite coatings were prepared via direct current, pulse current and pulse reverse current on copper electrical contacts for evaluating electrical contact performance. The effects of the addition of Gr and current types on microstructure, crystallographic orientation, mechanical properties and electrical contact performance were investigataed via a scanning electron microscope, an X-Ray diffractometer, microhardness test device and an electrical contact test device, respectively. The addition of Gr changed the Ag surface morphology and decreased grain sizes. Moreover, the addition of Gr significantly improved arc erosion resistivity and decreased the average working temperature during the contact test. In addition, pulse current and pulse reverse current provided a significant improvement in microhardness and electrical contact erosion resistance owing to increased embedded graphene amounts in silver layers.


1997 ◽  
Vol 25 (4) ◽  
pp. 543-547 ◽  
Author(s):  
N. Parkansky ◽  
R.L. Boxman ◽  
S. Goldsmith ◽  
Yu. Rosenberg

Author(s):  
Wei-Jian Li ◽  
Zi-Yao Chen ◽  
Hao Jiang ◽  
Xiao-Han Sui ◽  
Cong-Fei Zhao ◽  
...  

2019 ◽  
Vol 8 (1) ◽  
pp. 128-135 ◽  
Author(s):  
Xiaohui Zhang ◽  
Yi Zhang ◽  
Baohong Tian ◽  
Yanlin Jia ◽  
Yong Liu ◽  
...  

Abstract In order to investigate the effects of chromium on the electrical contact properties of the Al2O3-Cu/15W composites, vacuum hot-pressing sintering and internal oxidation methods were employed to fabricate the Al2O3-Cu/15W and Al2O3-Cu/15W5Cr composites. The microstructure was analyzed by scanning and transmission electron microscopy. The electrical contacts testing was performed using the JF04C testing machine at 30 V DC with 10-30 A current. The effects of Cr on the comprehensive properties, arc erosion morphology and welding force of the electrical contacts were investigated. The mass transfer mechanism was discussed. It was demonstrated that the Al2O3 nanoparticles pinned dislocations. The diffraction spots of the Cu matrix and the γ-Al2O3 disclose an orientation relationship of <103>Cu//<103>γ−Al2O3,{020}Cu//{040}γ−Al2O3. A typical arc erosion morphology, such as needle-like and coral structures was formed, which provides significantly enhanced arc erosion resistance of the contact material. Compared with the Al2O3-Cu/15W composite, the Al2O3-Cu/15W5Cr composite has a lower welding force. The two composites present two distinct mass transfer trends before and after 25 A. The final mass transfer direction of the composites is from the cathode to the anode. The Al2O3-Cu/15W5Cr contacts have less mass change under all testing conditions.


Rare Metals ◽  
2010 ◽  
Vol 29 (3) ◽  
pp. 248-254 ◽  
Author(s):  
J. Swingler ◽  
A. Sumption

2019 ◽  
Vol 160 ◽  
pp. 110-118 ◽  
Author(s):  
Xiaohui Zhang ◽  
Yi Zhang ◽  
Baohong Tian ◽  
Junchao An ◽  
Zhuan Zhao ◽  
...  

Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.


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