Analysis of Thickness Dependence of Nanoscaled Thin Film and Substrate by Ultrasonic Atomic Force Microscopy

2021 ◽  
Vol 22 (2) ◽  
pp. 345-354
Author(s):  
Dong-Ryul Kwak
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Thickness Dependence ◽  
Force Microscopy ◽  
Atomic Force

A HfO2 Thin Film Resistive Switch Based on Conducting Atomic Force Microscopy

2011 ◽  
Vol 14 (8) ◽  
pp. H311 ◽  
Author(s):  
J. Y. Son ◽  
D.-Y. Kim ◽  
H. Kim ◽  
W. J. Maeng ◽  
Y.-S. Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Resistive Switch ◽  
Force Microscopy ◽  
Atomic Force

Effect of ultra-thin Cu underlayer on the magnetic properties of Ni80Fe50 / Fe50Mn50 films

1999 ◽  
Vol 562 ◽  
Author(s):  
C. Liu ◽  
L. Shen ◽  
H. Jiang ◽  
D. Yang ◽  
G. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Exchange Bias ◽  
Film Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Maximum Value ◽  
Film Roughness

ABSTRACTThe Ni80Fe20/Fe50Mn50,thin film system exhibits exchange bias behavior. Here a systematic study of the effect of atomic-scale thin film roughness on coercivity and exchange bias is presented. Cu (t) / Ta (100 Å) / Ni80Fe20 (100 Å) / Fe50Mno50 (200 Å) / Ta (200 Å) with variable thickness, t, of the Cu underlayer were DC sputtered on Si (100) substrates. The Cu underlayer defines the initial roughness that is transferred to the film material since the film grows conformal to the initial morphology. Atomic Force Microscopy and X-ray diffraction were used to study the morphology and texture of the films. Morphological characterization is then correlated with magnetometer measurements. Atomic Force Microscopy shows that the root mean square value of the film roughness exhibits a maximum of 2.5 Å at t = 2.4 Å. X-ray diffraction spectra show the films are polycrystalline with fcc (111) texture and the Fe50Mn50 (111) peak intensity decreases monotonically with increasing Cu thickness, t. Without a Cu underlayer, the values of the coercivity and loop shift are, Hc = 12 Oe and Hp = 56 Oe, respectively. Both the coercivity and loop shift change with Cu underlayer thickness. The coercivity reaches a maximum value of Hc= 36 Oe at t = 4 Å. The loop shift exhibits an initial increase with t, reaches a maximum value of HP = 107 Oe at t = 2.4 Å, followed by a decrease with greater Cu thickness. These results show that a tiny increase in the film roughness has a huge effect on the exchange bias magnitude.

Scratching properties of nickel-iron thin film and silicon using atomic force microscopy

2009 ◽  
Vol 106 (4) ◽  
pp. 044314 ◽  
Author(s):  
Ampere A. Tseng ◽  
Jun-ichi Shirakashi ◽  
Shinya Nishimura ◽  
Kazuya Miyashita ◽  
Andrea Notargiacomo
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Nickel Iron ◽  
Force Microscopy ◽  
Atomic Force

Direct Observation of SEI Formation and Lithiation in Thin-Film Silicon Electrodes via in Situ Electrochemical Atomic Force Microscopy

2019 ◽  
Vol 2 (9) ◽  
pp. 6761-6767 ◽  
Author(s):  
Svenja Benning ◽  
Chunguang Chen ◽  
Rüdiger-A. Eichel ◽  
Peter H. L. Notten ◽  
Florian Hausen
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Direct Observation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Thin Film Silicon

scholarly journals Polystyrene as Graphene Film and 3D Graphene Sponge Precursor

Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 101 ◽  
Author(s):  
Alejandra Rendón-Patiño ◽  
Jinan Niu ◽  
Antonio Doménech-Carbó ◽  
Hermenegildo García ◽  
Ana Primo
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Photoelectron Spectroscopy ◽  
Graphene Film ◽  
Visible Absorption ◽  
X Ray ◽  
3D Graphene ◽  
Force Microscopy ◽  
Atomic Force ◽  
Graphene Sponge

Polystyrene as a thin film on arbitrary substrates or pellets form defective graphene/graphitic films or powders that can be dispersed in water and organic solvents. The materials were characterized by visible absorption, Raman and X-ray photoelectron spectroscopy, electron and atomic force microscopy, and electrochemistry. Raman spectra of these materials showed the presence of the expected 2D, G, and D peaks at 2750, 1590, and 1350 cm−1, respectively. The relative intensity of the G versus the D peak was taken as a quantitative indicator of the density of defects in the G layer.

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