Evaluation of lubricant coverage on thin-film magnetic discs by atomic force microscopy

ABSTRACTThe Ni80Fe20/Fe50Mn50,thin film system exhibits exchange bias behavior. Here a systematic study of the effect of atomic-scale thin film roughness on coercivity and exchange bias is presented. Cu (t) / Ta (100 Å) / Ni80Fe20 (100 Å) / Fe50Mno50 (200 Å) / Ta (200 Å) with variable thickness, t, of the Cu underlayer were DC sputtered on Si (100) substrates. The Cu underlayer defines the initial roughness that is transferred to the film material since the film grows conformal to the initial morphology. Atomic Force Microscopy and X-ray diffraction were used to study the morphology and texture of the films. Morphological characterization is then correlated with magnetometer measurements. Atomic Force Microscopy shows that the root mean square value of the film roughness exhibits a maximum of 2.5 Å at t = 2.4 Å. X-ray diffraction spectra show the films are polycrystalline with fcc (111) texture and the Fe50Mn50 (111) peak intensity decreases monotonically with increasing Cu thickness, t. Without a Cu underlayer, the values of the coercivity and loop shift are, Hc = 12 Oe and Hp = 56 Oe, respectively. Both the coercivity and loop shift change with Cu underlayer thickness. The coercivity reaches a maximum value of Hc= 36 Oe at t = 4 Å. The loop shift exhibits an initial increase with t, reaches a maximum value of HP = 107 Oe at t = 2.4 Å, followed by a decrease with greater Cu thickness. These results show that a tiny increase in the film roughness has a huge effect on the exchange bias magnitude.

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Scratching properties of nickel-iron thin film and silicon using atomic force microscopy

Journal of Applied Physics ◽

10.1063/1.3197313 ◽

2009 ◽

Vol 106 (4) ◽

pp. 044314 ◽

Cited By ~ 38

Author(s):

Ampere A. Tseng ◽

Jun-ichi Shirakashi ◽

Shinya Nishimura ◽

Kazuya Miyashita ◽

Andrea Notargiacomo

Keyword(s):

Thin Film ◽

Atomic Force Microscopy ◽

Nickel Iron ◽

Force Microscopy ◽

Atomic Force

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Chiral pattern formation: Combined transmission electron microscopy and atomic force microscopy study of tetracyanoquinodimethane thin film grown by vacuum evaporation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1459723 ◽

2002 ◽

Vol 20 (2) ◽

pp. 673 ◽

Cited By ~ 3

Author(s):

J. C. Li ◽

W. M. Liu ◽

Z. Q. Xue

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Atomic Force Microscopy ◽

Pattern Formation ◽

Microscopy Study ◽

Atomic Force Microscopy Study ◽

Force Microscopy ◽

Atomic Force ◽

Transmission Electron

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Direct Observation of SEI Formation and Lithiation in Thin-Film Silicon Electrodes via in Situ Electrochemical Atomic Force Microscopy

ACS Applied Energy Materials ◽

10.1021/acsaem.9b01222 ◽

2019 ◽

Vol 2 (9) ◽

pp. 6761-6767 ◽

Cited By ~ 6

Author(s):

Svenja Benning ◽

Chunguang Chen ◽

Rüdiger-A. Eichel ◽

Peter H. L. Notten ◽

Florian Hausen

Keyword(s):

Thin Film ◽

Atomic Force Microscopy ◽

Direct Observation ◽

Force Microscopy ◽

Atomic Force ◽

Thin Film Silicon

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Polystyrene as Graphene Film and 3D Graphene Sponge Precursor

Nanomaterials ◽

10.3390/nano9010101 ◽

2019 ◽

Vol 9 (1) ◽

pp. 101 ◽

Cited By ~ 4

Author(s):

Alejandra Rendón-Patiño ◽

Jinan Niu ◽

Antonio Doménech-Carbó ◽

Hermenegildo García ◽

Ana Primo

Keyword(s):

Thin Film ◽

Atomic Force Microscopy ◽

Photoelectron Spectroscopy ◽

Graphene Film ◽

Visible Absorption ◽

X Ray ◽

3D Graphene ◽

Force Microscopy ◽

Atomic Force ◽

Graphene Sponge

Polystyrene as a thin film on arbitrary substrates or pellets form defective graphene/graphitic films or powders that can be dispersed in water and organic solvents. The materials were characterized by visible absorption, Raman and X-ray photoelectron spectroscopy, electron and atomic force microscopy, and electrochemistry. Raman spectra of these materials showed the presence of the expected 2D, G, and D peaks at 2750, 1590, and 1350 cm−1, respectively. The relative intensity of the G versus the D peak was taken as a quantitative indicator of the density of defects in the G layer.

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