Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate

2005 ◽  
Vol 98 (11) ◽  
pp. 114506 ◽  
Author(s):  
N. Lukyanchikova ◽  
N. Garbar ◽  
A. Smolanka ◽  
M. Lokshin ◽  
E. Simoen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Back Gate ◽  
Fully Depleted

Novel Silicon On Insulator Metal Oxide Semiconductor Field Effect Transistors with Buried Back Gate

2004 ◽  
Vol 43 (4B) ◽  
pp. 2140-2144 ◽  
Author(s):  
Hyuckjae Oh ◽  
Hoon Choi ◽  
Takeshi Sakaguchi ◽  
JeoungChill Shim ◽  
Hiroyuki Kurino ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Back Gate
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