InAs/InAsSb type-II superlattice with near room-temperature long-wave emission through interface engineering

Rare Metals ◽  
2021 ◽  
Author(s):  
Bo-Wen Zhang ◽  
Dan Fang ◽  
Xuan Fang ◽  
Hong-Bin Zhao ◽  
Deng-Kui Wang ◽  
...  
2013 ◽  
Vol 22 (6) ◽  
pp. 327-334
Author(s):  
Ha Sul Kim ◽  
Hun Lee ◽  
Brianna Klein ◽  
Nutan Gautam ◽  
Elena A. Plis ◽  
...  

2006 ◽  
Vol 89 (5) ◽  
pp. 053519 ◽  
Author(s):  
E. H. Aifer ◽  
J. G. Tischler ◽  
J. H. Warner ◽  
I. Vurgaftman ◽  
W. W. Bewley ◽  
...  

Photonics ◽  
2021 ◽  
Vol 8 (5) ◽  
pp. 148
Author(s):  
Arash Dehzangi ◽  
Jiakai Li ◽  
Manijeh Razeghi

We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy on a GaSb substrate. At room temperature, the device exhibits a 50% cut-off wavelength of 1.74 µm. The device was revealed to have an electron-dominated avalanching mechanism with a gain value of 48 at room temperature. The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device. Low excess noise, as characterized by a carrier ionization ratio of ~0.07, has been achieved.


2017 ◽  
Vol 67 (2) ◽  
pp. 135 ◽  
Author(s):  
P.C. Klipstein ◽  
E. Avnon ◽  
Y. Benny ◽  
A. Fraenkel ◽  
A. Glozman ◽  
...  

The XBn/XBp family of barrier detectors enables diffusion limited dark currents comparable with HgxCd1-xTe Rule-07 and high quantum efficiencies. SCD’s XBp type II superlattice (T2SL) detector contains InAs/GaSb and InAs/AlSb T2SLs, and was designed for the long wave infrared (LWIR) atmospheric window using k · p based modeling of the energy bands and photo-response. Wafers are grown by molecular beam epitaxy and are fabricated into focal plane array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridisation, under-fill, and back-side polishing. The 640 × 512 pixel, 15 μm pitch, detector goes by the name of ‘Pelican-D LW’ and exhibits a quantum efficiency of ~ 50 per cent with background limited performance at an operating temperature of 77 K. It has a cut-off wave length of ~ 9.5 μm, with a pixel operability of above 99 per cent. The detector gives a very stable image with a residual non uniformity of below 0.04 per cent over its useful dynamic range. A new digital read-out integrated circuit has been designed so that the complete detector closely follows the configuration of SCD’s MWIR Pelican-D detector.


Proceedings ◽  
2019 ◽  
Vol 27 (1) ◽  
pp. 38
Author(s):  
Hackiewicz ◽  
Kopytko ◽  
Rutkowski ◽  
Martyniuk ◽  
Ciura

Electrical and optical properties of interband cascade infrared photodetectors with InAs/GaSb type-II superlattice absorbers are investigated in this work. We compare the detection parameters of detectors grown on the native GaSb substrate and lattice-mismatched GaAs substrate and seek solutions to enhance device performance, specifically with using an optical immersion. The detectors grown on GaAs have better detection parameters at room temperature, but at lower temperatures the misfit dislocations become more important and detectors grown on GaSb become better.


2015 ◽  
Author(s):  
P. C. Klipstein ◽  
E. Avnon ◽  
Y. Benny ◽  
A. Fraenkel ◽  
A. Glozman ◽  
...  

2007 ◽  
Author(s):  
E. H. Aifer ◽  
J. H. Warner ◽  
R. R. Stine ◽  
I. Vurgaftman ◽  
C. L. Canedy ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document