scholarly journals Low Noise Short Wavelength Infrared Avalanche Photodetector Using SB-Based Strained Layer Superlattice

Photonics ◽  
2021 ◽  
Vol 8 (5) ◽  
pp. 148
Author(s):  
Arash Dehzangi ◽  
Jiakai Li ◽  
Manijeh Razeghi
Keyword(s):  
Short Wavelength ◽  
Room Temperature ◽  
Molecular Beam ◽  
Impact Ionization ◽  
Low Noise ◽  
Excess Noise ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
Strained Layer Superlattice ◽  
Ionization Coefficients

We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy on a GaSb substrate. At room temperature, the device exhibits a 50% cut-off wavelength of 1.74 µm. The device was revealed to have an electron-dominated avalanching mechanism with a gain value of 48 at room temperature. The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device. Low excess noise, as characterized by a carrier ionization ratio of ~0.07, has been achieved.

scholarly journals Estimates of Impact Ionization Coefficients in Superlattice-Based Mid-Wavelength Infrared Avalanche Photodiodes

2003 ◽  
Vol 799 ◽  
Author(s):  
C. H. Grein ◽  
K. Abu El-Rub ◽  
M. E. Flatté ◽  
H. Ehrenreich
Keyword(s):  
Valence Band ◽  
Impact Ionization ◽  
Energy Gap ◽  
Avalanche Photodiodes ◽  
Threshold Energy ◽  
Type Ii ◽  
Band Engineering ◽  
Type Ii Superlattice ◽  
Low Threshold ◽  
Ionization Coefficients

ABSTRACTWe describe band engineering strategies to either enhance or suppress electron-initiated impact ionization relative to hole-initiated impact ionization in type II superlattice mid-wavelength infrared avalanche photodiodes. The strategy to enhance electron-initiated impact ionization involves placing a high density of states at approximately one energy gap above the bottom of the conduction band and simultaneously removing valence band states from the vicinity of one energy gap below the top of the valence band. This gives the electrons a low threshold energy and the holes a high one. The opposite strategy enhances hole-initiated impact ionization. Estimates of the electron (α) and hole (β) impact ionization coefficients predict that α/β>>1 in the first type of superlattice and α/β<<1 in the second type.

Demonstration of Fabricated Midwave Infrared InAs/GaSb Type-II Superlattice-based Focal Plane Arrays

2017 ◽  
Vol 67 (2) ◽  
pp. 149 ◽  
Author(s):  
K.C. Goma Kumari ◽  
H.M. Rawool ◽  
S. Chakrabarti
Keyword(s):  
Low Temperature ◽  
Focal Plane ◽  
Spectral Response ◽  
Low Noise ◽  
Focal Plane Arrays ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
Pixel Detectors ◽  
Midwave Infrared ◽  
Single Pixel

In this study, fabricated 320 × 256 infrared focal plane arrays (FPAs) were realised using a GaSb/InAs-based type-II superlattice heterostructure for midwave infrared (MWIR) imaging. We report here the optimized fabrication and characterization of single-pixel infrared detectors and FPAs. MWIR spectral response up to 5 μm of these single-pixel detectors was evident up to 250 K. Responsivity was measured to be 1.62 A/W at 0.8 V and 80 K. Current–voltage characteristics at room temperature (300 K) and at low temperature (18 K) revealed the resistance and dark current variation of the device in the operating bias region. Moreover, good thermal images were obtained at device temperatures up to 150 K for low-temperature targets. Low noise equivalent difference in temperature was measured to be 58 mK at 50 K and 117 mK at 120 K.

Mean multiplication gain and excess noise factor of GaN and Al0.45Ga0.55N avalanche photodiodes

2020 ◽  
Vol 92 (1) ◽  
pp. 10301
Author(s):  
Tat Lung Wesley Ooi ◽  
Pei Ling Cheang ◽  
Ah Heng You ◽  
Yee Kit Chan
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Monte Carlo Model ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor ◽  
Multiplication Gain ◽  
Ionization Coefficients ◽  
The Impact

In this work, Monte Carlo model is developed to investigate the avalanche characteristics of GaN and Al0.45Ga0.55N avalanche photodiodes (APDs) using random ionization path lengths incorporating dead space effect. The simulation includes the impact ionization coefficients, multiplication gain and excess noise factor for electron- and hole-initiated multiplication with a range of thin multiplication widths. The impact ionization coefficient for GaN is higher than that of Al0.45Ga0.55N. For GaN, electron dominates the impact ionization at high electric field while hole dominate at low electric field whereas Al0.45Ga0.55N has hole dominate the impact ionization at higher field while electron dominate the lower field. In GaN APDs, electron-initiated multiplication is leading the multiplication gain at thinner multiplication widths while hole-initiated multiplication leads for longer widths. However for Al0.45Ga0.55N APDs, hole-initiated multiplication leads the multiplication gain for all multiplication widths simulated. The excess noise of electron-initiated multiplication in GaN APDs increases as multiplication widths increases while the excess noise decreases as the multiplication widths increases for hole-initiated multiplication. As for Al0.45Ga0.55N APDs, the excess noise for hole-initiated multiplication increases when multiplication width increases while the electron-initiated multiplication increases with the same gradient at all multiplication widths.

InAs/InAsSb type-II superlattice with near room-temperature long-wave emission through interface engineering

Rare Metals ◽  
2021 ◽  
Author(s):  
Bo-Wen Zhang ◽  
Dan Fang ◽  
Xuan Fang ◽  
Hong-Bin Zhao ◽  
Deng-Kui Wang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Type Ii ◽  
Interface Engineering ◽  
Type Ii Superlattice ◽  
Long Wave ◽  
Wave Emission

Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-II Superlattice

2016 ◽  
Vol 33 (12) ◽  
pp. 128103
Author(s):  
Hai-Long Yu ◽  
Hao-Yue Wu ◽  
Hai-Jun Zhu ◽  
Guo-Feng Song ◽  
Yun Xu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Type Ii ◽  
Type Ii Superlattice
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