Crystalline and Structural Properties Dependence on RF Power and Deposition Temperature of Sputtered Nanocrystalline Silicon Thin Films on Teflon and Glass Substrates

2012 ◽  
Vol 576 ◽  
pp. 475-479
Author(s):  
Norhidayatul Hikmee Mahzan ◽  
Shaiful Bakhtiar Hashim ◽  
Sukreen Hana Herman ◽  
M. Rusop
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Structural Properties ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Nanocrystalline Silicon ◽  
Rf Power ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Scanning Electron

Nanocrystalline silicon (nc-Si) thin films were deposited on glass and polytetrafluoroethylene (PTFE, teflon) substrates using Radio frequency (RF) magnetron sputtering. The effect of RF power and deposition temperature on the physical and structural properties of nc-Si on the glass and Teflon substrate was studied. The thin films properties were examined by Raman spectroscopy and field emission scanning electron microscopy (FESEM). We found that the thickness of thin films increased with increased RF power and deposition temperature. Raman spectroscopy results it showed that, with increasing RF power and deposition temperature can cause the changing of crystallinity on both glass and Teflon substrate.

Effect of RF Power on the Structural Properties of Magnetron Sputtered ZnO Thin Films Deposited at Room Temperature

2012 ◽  
Vol 626 ◽  
pp. 163-167
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Room Temperature ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Rf Power ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Sputtering Power

Zinc oxide thin films were prepared at room temperature in pure argon ambient on glass substrates by RF magnetron sputtering. The effect of sputtering power (50~250 Watt) on the structural properties of the film were investigated. The thickness of ZnO thin films was measured using surface profiler (Dektak 150+). Atomic force microscopy machine (AFM-Park system XE-100) was used to characterize the morphology while the crystalinity have been characterized using XRD (Rigaku Ultima IV). It was found that the thickness, growth rate and RMS roughness increases with increasing RF power. All films exhibit the (002) plane which correspond to hexagonal wurtzite structure with the highest peak at 150 Watt.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

2012 ◽  
Vol 626 ◽  
pp. 168-172
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Rf Power ◽  
Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

Analysis of the Properties of Tungsten Carbide Thin Films According to the Sputtering Radio Frequency Power

2020 ◽  
Vol 12 (10) ◽  
pp. 1568-1571
Author(s):  
Seokwon Lee ◽  
Jung Hyun Kim ◽  
Young Park ◽  
Wonseok Choi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Tungsten Carbide ◽  
Rf Magnetron Sputtering ◽  
Sem Analysis ◽  
Glass Substrates ◽  
Frequency Power ◽  
Scanning Electron ◽  
Sputtering System

In this study, we investigated characteristics of tungsten carbide thin film according to carbon and tungsten ratio. Tungsten carbide thin film was co-sputtered on silicon substrate and glass substrates using an RF magnetron sputtering system. To analyze the characteristics according to the composition ratio of the tungsten carbide thin film, the RF powers of carbon/tungsten target were divided into 100 W/100 W, 125 W/75 W, 150 W/50 W, and 175 W/25 W, respectively. Hall measurement and 4 points probes were used to measure electrical properties of the tungsten carbide thin films. Raman and field emission scanning electron microscope (FE-SEM) analysis were performed.

Microstructure and Thermal Features of a-Si:H and nc-Si:H Thin Films Produced by Rf Sputtering

2006 ◽  
Vol 514-516 ◽  
pp. 23-27
Author(s):  
V. Thaiyalnayaki ◽  
M.Fátima Cerqueira ◽  
Francisco Macedo ◽  
João Alves Ferreira
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Thermal Properties ◽  
Rf Sputtering ◽  
Nanocrystalline Silicon ◽  
Transport Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Silicon Thin Films ◽  
Thermal Features

Amorphous and nanocrystalline silicon thin films have been produced by reactive r.f. sputtering and their microstructure, optical and thermal properties were evaluated. A good correlation was found between the microstructure determined by Raman spectroscopy and X- ray diffraction and the thermal transport parameters.

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