Linearity Performance Analysis of Double Gate (DG) VTFET Using HDB for RF Applications

Silicon ◽

10.1007/s12633-020-00499-x ◽

2020 ◽

Author(s):

Seema ◽

S.S. Chauhan

Keyword(s):

Performance Analysis ◽

Double Gate ◽

Rf Applications

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Performance Analysis of Underlap Double Gate Oxide Stacked Junctionless MOSFET for Analog and RF Applications

2019 TEQIP III Sponsored International Conference on Microwave Integrated Circuits, Photonics and Wireless Networks (IMICPW) ◽

10.1109/imicpw.2019.8933249 ◽

2019 ◽

Author(s):

Amit Bhattacharyya ◽

Prithviraj Pachal ◽

Anirban Pradhan ◽

Manash Chanda ◽

Debashis De

Keyword(s):

Performance Analysis ◽

Double Gate ◽

Rf Applications

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Design and Performance Analysis of Proposed Biosensor based on Double Gate Junctionless Transistor

Silicon ◽

10.1007/s12633-021-01335-6 ◽

2021 ◽

Author(s):

Pawandeep Kaur ◽

Avtar Singh Buttar ◽

Balwinder Raj

Keyword(s):

Performance Analysis ◽

Double Gate ◽

Junctionless Transistor ◽

And Performance

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Performance analysis of sampling switch structures for wideband sigma-delta noise shapers for RF applications

ASICON 2001. 2001 4th International Conference on ASIC Proceedings (Cat. No.01TH8549) ◽

10.1109/icasic.2001.982537 ◽

2002 ◽

Author(s):

A. Gothenberg ◽

H. Tenhunen

Keyword(s):

Performance Analysis ◽

Sigma Delta ◽

Rf Applications ◽

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Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation

Microelectronics Reliability ◽

10.1016/j.microrel.2011.02.004 ◽

2011 ◽

Vol 51 (6) ◽

pp. 1105-1112 ◽

Author(s):

Swagata Bhattacherjee ◽

Abhijit Biswas

Keyword(s):

Performance Analysis ◽

Carrier Concentration ◽

Gate Dielectrics ◽

Double Gate ◽

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Performance Analysis of Noise in Dual Halo Dual Dielectric Triple Material Surrounding Gate MOSFET for RF Applications

International Journal of Nanoscience ◽

10.1142/s0219581x20400025 ◽

2019 ◽

Author(s):

Prashant Kumar ◽

Neeraj Gupta ◽

Rashmi Gupta ◽

Amit Sharma

Keyword(s):

Performance Analysis ◽

Surrounding Gate ◽

Rf Applications

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Performance Analysis of Gate Electrode Work Function Variations in Double-gate Junctionless FET

Silicon ◽

10.1007/s12633-020-00774-x ◽

2020 ◽

Author(s):

Sandeep Kumar ◽

Arun Kumar Chatterjee ◽

Rishikesh Pandey

Keyword(s):

Performance Analysis ◽

Work Function ◽

Double Gate ◽

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Performance Analysis of Impact of Source/Drain Doping Gradients Well as Roll-Off Widths on Gate Induced Drain Leakage of Double Gate Metal Oxide Semiconductor Field Effect Transistor

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2018.2426 ◽

2018 ◽

Vol 13 (11) ◽

pp. 1705-1710

Author(s):

Parveen Kumar ◽

Sandeep Singh Gill

Keyword(s):

Performance Analysis ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor

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D.C. Performance Analysis of High-K Adiabatic Logic Circuits in Sub-Threshold Regime for RF Applications

Sensor Letters ◽

10.1166/sl.2019.4102 ◽

2019 ◽

Vol 17 (6) ◽

pp. 487-496 ◽

Author(s):

Savio Jay Sengupta ◽

Dipanjan Sen ◽

Swarnil Roy ◽

Manash Chanda ◽

Subir Kumar Sarkar

Keyword(s):

Performance Analysis ◽

Logic Circuits ◽

High K ◽

Adiabatic Logic ◽

Rf Applications ◽

Threshold Regime

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Potential modeling and performance analysis of junction-less quadruple gate MOSFETs for analog and RF applications

Microelectronics Journal ◽

10.1016/j.mejo.2017.06.004 ◽

2017 ◽

Vol 66 ◽

pp. 89-102 ◽

Author(s):

Akash Singh Rawat ◽

Santosh Kumar Gupta

Keyword(s):

Performance Analysis ◽

Rf Applications ◽

And Performance

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How crucial is back gate misalignment/oversize in double gate MOSFETs for ultra-low-voltage analog/rf applications?

Solid-State Electronics ◽

10.1016/j.sse.2008.06.051 ◽

2008 ◽

Vol 52 (12) ◽

pp. 1895-1903 ◽

Author(s):

Abhinav Kranti ◽

G. Alastair Armstrong

Keyword(s):

Low Voltage ◽

Double Gate ◽

Back Gate ◽

Rf Applications

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