Coulomb Blockade Effect through Single Electron Tunneling Method in Cylindrical Gate Organic Light Emitting Transistor Configuration

Silicon ◽  
2021 ◽  
Author(s):  
Sandeep Kumar Ojha ◽  
Brijesh Kumar
1996 ◽  
Vol 46 (S4) ◽  
pp. 2281-2282 ◽  
Author(s):  
A. B. Zorin ◽  
V. A. Krupenin ◽  
S. V. Lotkhov ◽  
J. Niemeyer ◽  
D. E. Presnov ◽  
...  

1992 ◽  
Vol 06 (05) ◽  
pp. 273-280 ◽  
Author(s):  
M.D. REEVE ◽  
O.G. SYMKO ◽  
R. LI

Tunneling studies between a Scanning Tunneling Microscope (STM)-controlled fine NbN tip and a NbN thin film show single electron tunneling characteristics at room temperature. The I-V curves display the Coulomb blockade and the Coulomb staircase caused by single electron charging of a series combination of two tunnel junctions. These room temperature observations indicate that it may be possible to operate single-electron-based devices in non-cryogenic regimes.


2012 ◽  
Vol 27 (01) ◽  
pp. 1350008 ◽  
Author(s):  
QIONG MA ◽  
TAO TU ◽  
LI WANG ◽  
CHEN ZHOU ◽  
ZHI-RONG LIN ◽  
...  

We study the conductance spectrum of graphene quantum dots, both single- and multiple-dot cases. The single electron tunneling through a graphene dot is investigated and the periodicity, amplitude and line shape of the Coulomb blockade oscillations at low temperatures are obtained, which are consistent with the recent experimental observations. Further, we discuss the transport behavior when multiple dots are assembled in array and find a phase transition of conductance spectra from individual Coulomb blockade to collective Coulomb blockade.


2021 ◽  
Author(s):  
Sandeep Kumar Ojha ◽  
Brijesh Kumar

Abstract In the field of nano electronics some nano-structure applications such as quantum dots (QDs), wires, wells and bulks must have distinctive potentials. These crystal structures emerged by an inorganic organic hybrid halide materials which processes in tremendous optoelectronic applications like electroluminescence, photoluminescence quantum yield (93.2%). There is a need of coupling to their surroundings by these structures which can either add or subtract electrons from the electrodes. As per state of the art the significant research efforts in about an isolated quantum dot coupling through tunneling of two leads that is source lead for supply of electrons and a drain lead for removes of electrons and their performances will be offered and discussed in the view for the realization of possible between Dual Gate Cylindrical Organic Light Emitting Transistor (OLET) architectures. In this article we examined the optical as well as electrical characteristics operation of cylindrical Dual Gate OLET (CDGOLET). Last year perovskite quantum dot (PQD) most preferred for the purpose of light-emitting transistors with high brightness of up to 1.432× 104 cd m− 2, high electron mobility’s of up to 14.052 cm2 v− 1 s− 1, and their external quantum efficiencies (EQE) of up to 1.85% operating at a source drain operating potential of 50 V.


1994 ◽  
Vol 203 (3-4) ◽  
pp. 417-422 ◽  
Author(s):  
A.D. Zaikin ◽  
D.S. Golubev ◽  
S.V. Panyukov

1992 ◽  
Vol 42-44 ◽  
pp. 22-32 ◽  
Author(s):  
M.H. Devoret ◽  
D. Esteve ◽  
H. Grabert ◽  
G.-L. Ingold ◽  
H. Pothier ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document