Cross-sectional investigation of radiation damage of 2 MeV proton-irradiated silicon carbide

2018 ◽  
Vol 29 (4) ◽  
Author(s):  
Xu Wang ◽  
Yan-Wen Zhang ◽  
Dong Han ◽  
Yun-Biao Zhao ◽  
Zi-Qiang Zhao ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Radiation Damage ◽  
Cross Sectional

scholarly journals Radiation damage thin coating of silicon carbide

2014 ◽  
Vol 510 ◽  
pp. 012010 ◽  
Author(s):  
Anna Bondareva ◽  
Galina Zmievskaya ◽  
Tatjana Levchenko
Keyword(s):  
Silicon Carbide ◽  
Radiation Damage ◽  
Thin Coating

scholarly journals Influence of radiation damage on xenon diffusion in silicon carbide

2014 ◽  
Vol 332 ◽  
pp. 415-420 ◽  
Author(s):  
E. Friedland ◽  
K. Gärtner ◽  
T.T. Hlatshwayo ◽  
N.G. van der Berg ◽  
T.T. Thabethe
Keyword(s):  
Silicon Carbide ◽  
Radiation Damage

scholarly journals Influence of radiation damage on strontium and iodine diffusion in silicon carbide

2012 ◽  
Vol 425 (1-3) ◽  
pp. 205-210 ◽  
Author(s):  
E. Friedland ◽  
N.G. van der Berg ◽  
J.B. Malherbe ◽  
E. Wendler ◽  
W. Wesch
Keyword(s):  
Silicon Carbide ◽  
Radiation Damage ◽  
Iodine Diffusion

Radiation Damage in Diamond and Silicon Carbide

1956 ◽  
Vol 103 (5) ◽  
pp. 1184-1192 ◽  
Author(s):  
W. Primak ◽  
L. H. Fuchs ◽  
P. P. Day
Keyword(s):  
Silicon Carbide ◽  
Radiation Damage

On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide

2011 ◽  
Vol 679-680 ◽  
pp. 358-361 ◽  
Author(s):  
Massimo Camarda ◽  
Andrea Severino ◽  
Patrick Fiorenza ◽  
Vito Raineri ◽  
S. Scalese ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Resolution ◽  
Cross Sectional ◽  
Hydrogen Etching ◽  
Step Bunching ◽  
Electron Microscopies ◽  
Atomic Force ◽  
Transmission Electron ◽  
Surface Morphologies ◽  
Scanning Electron

Using several types of surface analysis (Optical profilometers (OP), Atomic Force Microscopies (AFM), Scanning Electron Microscopies (SEM) and cross-sectional high-resolution Transmission Electron Microscopies (TEM)) we analyze the surface morphologies of misoriented 4H silicon carbide after pre-growth hydrogen etching and homo-epitaxial growths. We observed the characteristic self-ordering of nano-facets on any analyzed surface. This nano-faceting, which should not be confused with step bunching, can be considered as a close-to-equilibrium instability, for this reason can be hindered.

Influence of radiation damage on diffusion of fission products in silicon carbide

2013 ◽  
Vol 10 (2) ◽  
pp. 208-215 ◽  
Author(s):  
Erich Friedland ◽  
Thulani Hlatshwayo ◽  
Nic van der Berg
Keyword(s):  
Silicon Carbide ◽  
Radiation Damage ◽  
Fission Products

Growth of Epitaxial 2H-silicon Carbide by Pulsed Laser Deposition

1994 ◽  
Vol 339 ◽  
Author(s):  
Mark A. Stan ◽  
Martin O. Patton ◽  
Hemasiri K. M. Vithana ◽  
David L. Johnson ◽  
Joseph D. Warner ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Average Diameter ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Columnar Grains ◽  
20 Nm ◽  
Heater Plate

ABSTRACTSilicon carbide films have been grown on 6H-SiC (0001) and Si (001) wafers by laser ablation using an excimer laser. The films were deposited at heater plate temperatures between 970° C to 1270° C. Film composition, morphology and polytypism were determined by Auger electron spectroscopy, atomic force microscopy and high resolution transmission electron microscopy (TEM). In the course of these experiments growth of 2H-SiC on 6H-SiC was observed at the highest heater plate temperatures. Cross-sectional TEM images clearly show the symmetry of a film grown at 1270° C as c-axis oriented 2H-SiC containing columnar grains with average diameter of 20 nm and length of 100 nm.

Sign in / Sign up

Export Citation Format

Share Document