Growth of Epitaxial 2H-silicon Carbide by Pulsed Laser Deposition

ABSTRACTSilicon carbide films have been grown on 6H-SiC (0001) and Si (001) wafers by laser ablation using an excimer laser. The films were deposited at heater plate temperatures between 970° C to 1270° C. Film composition, morphology and polytypism were determined by Auger electron spectroscopy, atomic force microscopy and high resolution transmission electron microscopy (TEM). In the course of these experiments growth of 2H-SiC on 6H-SiC was observed at the highest heater plate temperatures. Cross-sectional TEM images clearly show the symmetry of a film grown at 1270° C as c-axis oriented 2H-SiC containing columnar grains with average diameter of 20 nm and length of 100 nm.