On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide

2011 ◽  
Vol 679-680 ◽  
pp. 358-361 ◽  
Author(s):  
Massimo Camarda ◽  
Andrea Severino ◽  
Patrick Fiorenza ◽  
Vito Raineri ◽  
S. Scalese ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Resolution ◽  
Cross Sectional ◽  
Hydrogen Etching ◽  
Step Bunching ◽  
Electron Microscopies ◽  
Atomic Force ◽  
Transmission Electron ◽  
Surface Morphologies ◽  
Scanning Electron

Using several types of surface analysis (Optical profilometers (OP), Atomic Force Microscopies (AFM), Scanning Electron Microscopies (SEM) and cross-sectional high-resolution Transmission Electron Microscopies (TEM)) we analyze the surface morphologies of misoriented 4H silicon carbide after pre-growth hydrogen etching and homo-epitaxial growths. We observed the characteristic self-ordering of nano-facets on any analyzed surface. This nano-faceting, which should not be confused with step bunching, can be considered as a close-to-equilibrium instability, for this reason can be hindered.

A Working Method for Adapting the (SEM) Scanning Electron Microscope to Produce (STEM) Scanning Transmission Electron Microscope Images

2002 ◽  
Author(s):  
Edward Coyne
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Theoretical Idea ◽  
Cross Sectional ◽  
Additional Advantage ◽  
Transmission Electron ◽  
Resolution Element ◽  
Scanning Electron

Abstract This paper describes the problems encountered and solutions found to the practical objective of developing an imaging technique that would produce a more detailed analysis of IC material structures then a scanning electron microscope. To find a solution to this objective the theoretical idea of converting a standard SEM to produce a STEM image was developed. This solution would enable high magnification, material contrasting, detailed cross sectional analysis of integrated circuits with an ordinary SEM. This would provide a practical and cost effective alternative to Transmission Electron Microscopy (TEM), where the higher TEM accelerating voltages would ultimately yield a more detailed cross sectional image. An additional advantage, developed subsequent to STEM imaging was the use of EDX analysis to perform high-resolution element identification of IC cross sections. High-resolution element identification when used in conjunction with high-resolution STEM images provides an analysis technique that exceeds the capabilities of conventional SEM imaging.

Growth of Epitaxial 2H-silicon Carbide by Pulsed Laser Deposition

1994 ◽  
Vol 339 ◽  
Author(s):  
Mark A. Stan ◽  
Martin O. Patton ◽  
Hemasiri K. M. Vithana ◽  
David L. Johnson ◽  
Joseph D. Warner ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Average Diameter ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Columnar Grains ◽  
20 Nm ◽  
Heater Plate

ABSTRACTSilicon carbide films have been grown on 6H-SiC (0001) and Si (001) wafers by laser ablation using an excimer laser. The films were deposited at heater plate temperatures between 970° C to 1270° C. Film composition, morphology and polytypism were determined by Auger electron spectroscopy, atomic force microscopy and high resolution transmission electron microscopy (TEM). In the course of these experiments growth of 2H-SiC on 6H-SiC was observed at the highest heater plate temperatures. Cross-sectional TEM images clearly show the symmetry of a film grown at 1270° C as c-axis oriented 2H-SiC containing columnar grains with average diameter of 20 nm and length of 100 nm.

Correlative atomic-force microscopy and high-resolution scanning electron microscopy of proteins attached to platelet surfaces

1993 ◽  
Vol 51 ◽  
pp. 230-231
Author(s):  
S.R. Simmons ◽  
S.J. Eppell ◽  
R.E. Marchant ◽  
R.M. Albrecht
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Resolution ◽  
Low Voltage ◽  
Atomic Scale ◽  
Biological Macromolecules ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Scanning Electron

The atomic force microscope (AFM) has provided images at submolecular or atomic scale resolution of biological macromolecules attached to surfaces such as mica, graphite, or synthetic phospholipid membranes. Because the AFM can be operated with the sample in air, vacuum, or immersed in a liquid such as a biological buffer, it has the potential for high resolution imaging of the structure and organization of macromolecules on surfaces of cells in the hydrated or even living state. Realization of this potential would allow observation of molecular processes at the cell surface without the necessity for preparation of the sample for electron microscopy. To date, however, the AFM has yielded images of cell surfaces only at relatively low magnifications, and has not provided the atomic resolution achieved on hard, crystalline surfaces.Previously we have utilized correlative video-enhanced light microscopy, high voltage transmission electron microscopy, and low voltage, high resolution scanning electron microscopy (HRSEM)

Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks

2009 ◽  
Vol 1181 ◽  
Author(s):  
Frederic J.C. Fischer ◽  
Michael Weinl ◽  
Jöerg K N Lindner ◽  
Bernd Stritzker
Keyword(s):  
Electron Microscopy ◽  
Silicon Surfaces ◽  
Cross Sectional ◽  
Hierarchical Arrangement ◽  
Atomic Force ◽  
Transmission Electron ◽  
Mask Size ◽  
Surface Morphologies ◽  
Nanostructured Si ◽  
Regular Arrays

AbstractA novel technique to form periodically nanostructured Si surface morphologies based on nanosphere lithography (NSL) and He ion implantation induced swelling is studied in detail. It is shown that by implantation of keV He ions through the nanometric openings of NSL masks regular arrays of hillocks and rings can be created on silicon surfaces. The shape and size of these surface features can be easily controlled by adjusting the ion dose and energy as well as the mask size. Feature heights of more than 100 nm can be obtained, while feature distances are typically 1.15 or 2 (hillock or ring) nanosphere radii, which are chosen to be between 100 and 500 nm in this study. Atomic force and scanning electron microscopy measurements of the surface morphology are supplemented by cross-sectional transmission electron microscopy, revealing the inner structure of hillocks to consist of a central cavity surrounded by a hierarchical arrangement of smaller voids. The surface morphologies developed here have the potential to be useful for fixing and separating nano-objects on a silicon surface.

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

Temperature Dependent Quasi-Periodic Facetting of AlAs Grown by MBE on (100) GaAs Substrates

1993 ◽  
Vol 312 ◽  
Author(s):  
Richard Mirin ◽  
Mohan Krishnamurthy ◽  
James Ibbetson ◽  
Arthur Gossard ◽  
John English ◽  
...  
Keyword(s):  
Growth Conditions ◽  
High Energy ◽  
High Energy Electron ◽  
Temperature Dependent ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Facet Formation

AbstractHigh temperature (≥ 650°C) MBE growth of AlAs and AlAs/GaAs superlattices on (100) GaAs is shown to lead to quasi-periodic facetting. We demonstrate that the facetting is only due to the AlAs layers, and growth of GaAs on top of the facets replanarizes the surface. We show that the roughness between the AlAs and GaAs layers increases with increasing number of periods in the superlattice. The roughness increases to form distinct facets, which rapidly grow at the expense of the (100) surface. Within a few periods of the initial facet formation, the (100) surface has disappeared and only the facet planes are visible in cross-sectional transmission electron micrographs. At this point, the reflection high-energy electron diffraction pattern is spotty, and the specular spot is a distinct chevron. We also show that the facetting becomes more pronounced as the substrate temperature is increased from 620°C to 710°C. Atomic force micrographs show that the valleys enclosed by the facets can be several microns long, but they may also be only several nanometers long, depending on the growth conditions.

Mechanical Interlocking on Leadframe Surface for Bondability of Au Wedge Bond

2016 ◽  
Vol 857 ◽  
pp. 79-82
Author(s):  
Roslina Ismail ◽  
Fuaida Harun ◽  
Azman Jalar ◽  
Shahrum Abdullah
Keyword(s):  
Optical Microscope ◽  
Bonding Process ◽  
Mechanical Interlocking ◽  
Average Roughness ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Morphologies ◽  
Scanning Electron ◽  
Effect Of Surface

This work is a contribution towards the understanding of wire bond integrity and reliability in relation to their microstructural and mechanical properties in semiconductor packaging.The effect of surface roughness and hardness of leadframe on the bondability of Au wedge bond still requires detail analysis. Two type of leadframes namely leadframe A and leadframe B were chosen and scanning electron microscope (SEM) and optical microscope were used to inspect the surface morphology of leadframes and the quality of created Au wedge bond after wire bonding process. It was found that there were significant differences in the surface morphologies between these two leadframes. The atomic force microscopy (AFM) which was utilized to measure the average roughness, Ra of lead finger confirms that leadframe A has the highest Ra with value of 166.46 nm compared to that of leadframe B with value of 85.89 nm. While hardness value of different lead finger from the selected leadframe A and B obtained using Vicker microhardness tester are 180.9 VH and 154.2VH respectively.

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