High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD

The paper reports on the first experimental results of the mid-wave infrared (MWIR) HgCdTe barrier detectors operated at near-room temperatures and fabricated using metal organic chemical vapor deposition (MOCVD). SIMS profiles let to compare projected and obtained structures and reveals interdiffusion processes between the layers. Undesirable iodine diffusion from cap to the barrier increase the valance band offset and is the key item in limiting the performance of HgCdTe nBn detector. However, MOCVD technology with a wide range of composition and donor/acceptor doping and without post grown annealing might be successfully adopted for barrier device architectures.

Iodine Volume Diffusion Measurements in Uranium Dioxide

The presence of iodine in UO2has a great impact on nuclear fuel behaviour, both during-in reactor operation or under long-term repository conditions. Here the volume diffusion coefficient of iodine is studied using a methodology which involves ion implantation, annealing under different oxygen potentials and SIMS (Secondary Ion Mass Spectroscopy) for the concentration profile characterization of samples. The changes in the initial concentration profile induced by annealing are interpreted using Ficks second law to determine the diffusion coefficient. The first part of this paper is devoted to the description of the applied methodology. The iodine diffusion coefficients in the bulk are shown to depend upon the annealing temperature and oxygen potential. In smaller grained polycrystalline samples, the SIMS signal is averaged out over several grains and therefore, the analysis of the depth profile changes in samples due to annealing may be efficiently compared to depth profiles in as-implanted samples. By contrast, in Cr-doped UO2samples in which the grain size is larger than the zone analysed by SIMS, a particular methodology has to be developed. To this end, large grained material was examined using EBSD (Electron Back Scattering Diffraction) in order to determine the relative crystalline orientations of the grains. Following iodine implantations, various grains with different orientations were studied using SIMS. An attempt is presented at correlating the different sputtering rates with the various grain orientations.