scholarly journals Non-volatile SRAM memory cells based on ReRAM technology

2020 ◽  
Vol 2 (9) ◽  
Author(s):  
Hussein Bazzi ◽  
Adnan Harb ◽  
Hassen Aziza ◽  
Mathieu Moreau
Keyword(s):  
2019 ◽  
pp. 181-210
Author(s):  
Helen-Maria Dounavi ◽  
Yiorgos Sfikas ◽  
Yiorgos Tsiatouhas

2009 ◽  
Vol E92-C (4) ◽  
pp. 423-432 ◽  
Author(s):  
Hidehiro FUJIWARA ◽  
Shunsuke OKUMURA ◽  
Yusuke IGUCHI ◽  
Hiroki NOGUCHI ◽  
Hiroshi KAWAGUCHI ◽  
...  
Keyword(s):  

Author(s):  
T. Zanon ◽  
W. Maly

Abstract Building a portfolio of deformations is the key step for building better defect models for the test and yield learning domain. A viable approach to achieve this goal is through geometric characterization and classification of failure patterns found on memory fail bitmaps. In this paper, we present preliminary results on how to build such a portfolio of deformations for an IC technology of interest based on a fail bitmap analysis study conducted on large, modern SRAM memory products.


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