Abstract
Existing resonant tunneling modes in the shape of line-type resonances can improve the transport properties of the junction. Motivated by the unique structural properties of monolayer WSe2 e.g. significant spin-orbit coupling (SOC) and large direct bandgap, the transport properties of a normal/ferromagnetic/normal (NFN) WSe2 junction with large incident angles in the presence of exchange field (h), off-resonance light (∆Ω) and gate voltage (U) is studied. In a certain interval of U, the transmission shows a gap with optically controllable width, while outside it, the spin and valley resolved transmissions have an oscillatory behavior with respect to U. By applying ∆Ω (h), an optically (electrically) switchable perfect spin and valley polarizations at all angles of incidence have been found. For large incident angles, the transmission resonances change to spin-valley-dependent separated ideal line-type resonant peaks with respect to U, resulting in switchable perfect spin and valley polarizations, simultaneously. Furthermore, even in the absence of U, applying h or ∆Ω at large incident angles can give some spin-valley dependent ideal transmission peaks, making h or ∆Ω a transmission valve capable of giving a switchable fully spinvalley filtering effect. These findings suggest some alternate methods for providing high-efficiency spin and valley filtering devices based on WSe2.
Subwavelength hole arrays with nanoapertures fabricated by scanning probe nanolithography
