Exploration of switching characteristics of 4H-SiC floating junction Schottky barrier diodes with stronger blocking voltage capability

2021 ◽  
Author(s):  
Yagong Nan ◽  
Genquan Han
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Blocking Voltage ◽  
Switching Characteristics

SiC Schottky Barrier Diodes with High Blocking Voltage of 1kV

1993 ◽  
Author(s):  
Tatsuo URUSHIDANI ◽  
Sota KOBAYASHI ◽  
Tsunenobu KIMOTO ◽  
Hiroyuki MATSUNAMI
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Blocking Voltage

Fabrication of 3.4kV high voltage n-type 4H-SiC Schottky barrier diodes using thick epitaxial layers

2000 ◽  
Vol 640 ◽  
Author(s):  
Takashi Tsuji ◽  
Hiroyuki Fujisawa ◽  
Shinji Ogino ◽  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
High Yield ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes ◽  
Leakage Currents ◽  
Bright Spots ◽  
Blocking Voltage ◽  
Voltage Region ◽  
The Ideal

ABSTRACTFabrication and evaluation of high voltage n-type 4H-SiC Schottky barrier diodes (SBDs) using 27μm thick epitaxial layers were presented. To achieve the ideal value of the breakdown voltage, various parameters of junction termination extension (JTE) were investigated. We concluded that the termination of triple rings with the concentrations of 6×1017, 3×1017, 1.5×1017cm−1 outwardly was best with the simulations. The SBDs with this termination showed the blocking voltage up to 3.4kV, which is almost the ideal value. We also investigated the distribution of leakage currents at -600V in SBDs with various diameters up to 4mm. High yield was obtained in the SBDs with the diameters below 2mm. The SBDs with high leakage currents showed the excess currents in the low forward voltage region and lots of bright spots could be observed by optical beam induced current analysis.

Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV

2017 ◽  
Vol 38 (9) ◽  
pp. 1286-1289 ◽  
Author(s):  
Houqiang Fu ◽  
Izak Baranowski ◽  
Xuanqi Huang ◽  
Hong Chen ◽  
Zhijian Lu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Blocking Voltage

Switching characteristics of amorphous silicon Schottky barrier diodes

1983 ◽  
Vol 59-60 ◽  
pp. 1175-1178 ◽  
Author(s):  
Yasuo Nara ◽  
Yoshimitsu Kudou ◽  
Masakiyo Matsumura
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Switching Characteristics

Gallium Oxide Schottky Barrier Diodes

2016 ◽  
Vol 136 (4) ◽  
pp. 479-483
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akito Kuramata
Keyword(s):  
Schottky Barrier ◽  
Gallium Oxide ◽  
Schottky Barrier Diodes

Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity

2020 ◽  
Vol 13 (9) ◽  
pp. 096502
Author(s):  
Yu Lu ◽  
Feng Zhou ◽  
Weizong Xu ◽  
Dongsheng Wang ◽  
Yuanyang Xia ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Turn On ◽  
High Uniformity

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

2019 ◽  
Vol 780 ◽  
pp. 476-481 ◽  
Author(s):  
Hong Gu ◽  
Cong Hu ◽  
Jiale Wang ◽  
Youming Lu ◽  
Jin-Ping Ao ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Free Standing

Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

2021 ◽  
Vol 118 (24) ◽  
pp. 243501
Author(s):  
Xiaolu Guo ◽  
Yaozong Zhong ◽  
Xin Chen ◽  
Yu Zhou ◽  
Shuai Su ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Gan On Si
Sign in / Sign up

Export Citation Format

Share Document