Kapitza conductance of the gadolinium gallium garnet, Gd3Ga5O12 between 1.4 K and 2.1 K

Cryogenics ◽  
1984 ◽  
Vol 24 (3) ◽  
pp. 156-158 ◽  
Author(s):  
Y. Hakuraku
Keyword(s):  
Gadolinium Gallium Garnet ◽  
Kapitza Conductance

Gadolinium Gallium Garnet

1973 ◽  
Vol 13 (8) ◽  
pp. 314-314 ◽  
Author(s):  
M. J. O’Donoghue
Keyword(s):  
Gadolinium Gallium Garnet

Luminescence and photoconductivity of gadolinium gallium garnet single crystals irradiated by high-energy electrons and neutrons

1993 ◽  
Vol 140 (2) ◽  
pp. 353-361 ◽  
Author(s):  
V. I. Vasyltsiv ◽  
Ya. M. Zakharko ◽  
A. O. Matkovskii ◽  
D. Yu. Sugak ◽  
S. B. Ubizskii ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Energy ◽  
Gadolinium Gallium Garnet ◽  
High Energy Electrons

Equation of state for gadolinium gallium garnet crystals: Experimental and computational study

2009 ◽  
Vol 95 (14) ◽  
pp. 141902 ◽  
Author(s):  
A. Durygin ◽  
V. Drozd ◽  
W. Paszkowicz ◽  
E. Werner-Malento ◽  
R. Buczko ◽  
...  
Keyword(s):  
Equation Of State ◽  
Computational Study ◽  
Gadolinium Gallium Garnet

Measurements of Thermal Conductivity and Kapitza Conductance of Niobium for SRF Cavities for Various Treatments

2007 ◽  
Vol 17 (2) ◽  
pp. 1310-1313 ◽  
Author(s):  
Ahmad Aizaz ◽  
Pierre Bauer ◽  
Terry L. Grimm ◽  
Neil T. Wright ◽  
Claire Z. Antoine
Keyword(s):  
Thermal Conductivity ◽  
Kapitza Conductance ◽  
Srf Cavities

scholarly journals Crystallization of Bi-substituted iron garnet bi-layers

2021 ◽  
Vol 2086 (1) ◽  
pp. 012044
Author(s):  
T V Mikhailova ◽  
Yu E Vysokikh ◽  
A N Shaposhnikov ◽  
V N Berzhansky ◽  
S Yu Krasnoborodko ◽  
...  
Keyword(s):  
High Performance ◽  
Crystallization Process ◽  
Process Parameter ◽  
Gadolinium Gallium Garnet ◽  
Semiconductor Technology ◽  
Sputtering Deposition ◽  
Fused Quartz ◽  
Iron Garnet ◽  
Substrate Types

Abstract Magneto-optical (MO) structures are widely used for different application in the fields of magnetoplasmonics, magneto-optics, photonics e.t.c. Bi-substituted iron garnet (Bi:IG) is high-performance MO material. Integration of Bi:IG films to silicon semiconductor technology gives new opportunities to create nanoscale hight performance MO devices. Vacuum sputtering deposition allows to fabricate Bi:IG structures on different substrate types. Authors investigate crystallization process of Bi:IG bi-layers in a different process parameter (different layers composition and its thickness, temperature and time of annealing) using gadolinium gallium garnet GGG and fused quartz SiO2 substrates to determine dependences which impact on crystallization.

scholarly journals Моделирование проводимости Капицы через шероховатые интерфейсы между твердыми телами

2021 ◽  
Vol 63 (7) ◽  
pp. 982
Author(s):  
Б. Лю ◽  
В.И. Хвесюк ◽  
А.А. Баринов
Keyword(s):  
Experimental Data ◽  
Theoretical Prediction ◽  
Transmission Coefficient ◽  
Wide Temperature Range ◽  
Acoustic Waves ◽  
Theoretical Method ◽  
Interface Roughness ◽  
Kapitza Conductance ◽  
Acoustic Mismatch ◽  
The Difference

In this work, we have formulated and solved the problem of determining the Kapitza conductance across the interface between two solids, taking into account the interface roughness. We use a modified acoustic mismatch model (AMM). The difference from the classic model is that the dispersion properties of acoustic waves are considered. A significant advantage of this model is that the theoretical prediction agrees well with experimental data over a wide temperature range: from 30K to more than 300K. Finally, a theoretical method with the statistical distribution of roughness profiles is used to determine the energy transmission coefficient across the interface.

Spectra, energy levels, and symmetry assignments for Stark components of Eu3+(4f6) in gadolinium gallium garnet (Gd3Ga5O12)

2011 ◽  
Vol 131 (9) ◽  
pp. 1945-1952 ◽  
Author(s):  
John B. Gruber ◽  
Uygun V. Valiev ◽  
Gary W. Burdick ◽  
Sharof A. Rakhimov ◽  
Madhab Pokhrel ◽  
...  
Keyword(s):  
Energy Levels ◽  
Gadolinium Gallium Garnet
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