Crystallization of Bi-substituted iron garnet bi-layers

Abstract Magneto-optical (MO) structures are widely used for different application in the fields of magnetoplasmonics, magneto-optics, photonics e.t.c. Bi-substituted iron garnet (Bi:IG) is high-performance MO material. Integration of Bi:IG films to silicon semiconductor technology gives new opportunities to create nanoscale hight performance MO devices. Vacuum sputtering deposition allows to fabricate Bi:IG structures on different substrate types. Authors investigate crystallization process of Bi:IG bi-layers in a different process parameter (different layers composition and its thickness, temperature and time of annealing) using gadolinium gallium garnet GGG and fused quartz SiO2 substrates to determine dependences which impact on crystallization.

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Crystallization Double-Layer Magneto-Active Films for Magnetophotonics

Journal of Physics Conference Series ◽

10.1088/1742-6596/2091/1/012049 ◽

2021 ◽

Vol 2091 (1) ◽

pp. 012049

Author(s):

T V Mikhailova ◽

Yu E Vysokikh ◽

A N Shaposhnikov ◽

V N Berzhansky ◽

S Yu Krasnoborodko ◽

...

Keyword(s):

Double Layer ◽

Crystallization Process ◽

High Efficiency ◽

Optical Devices ◽

Gadolinium Gallium Garnet ◽

Fused Quartz ◽

Optical Nanostructures ◽

Iron Garnet ◽

Quartz Substrates ◽

Semiconductor Process

Abstract Magneto-optics, magnetophotonics and magnetoplasmonics stay at the edge of scientific interests last years due to their unique features to manage the light and electromagnet field. Bi-substituted iron garnet (Bi:IG) is one of most promising magneto-optical material for these applications in order to its high efficiency in visible and infrared spectra. The possibility to integrate Bi:IG films to silicon semiconductor process leads to creation nanoscale hight performance magneto-optical devices. Bi:IG structures of different composition might be deposited by vacuum deposition on different substrates. The investigation of crystallization process of Bi:IG double-layer films at a different process parameter on gadolinium gallium garnet and fused quartz substrates allowing to determine dependences and suggestions for integration Bi:IG to semiconductor process or multicomponent optical nanostructures.

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Synthesis of high-performance magnetic garnet materials and garnet-bismuth oxide nanocomposites using physical vapor deposition followed by high-temperature crystallization

Pure and Applied Chemistry ◽

10.1351/pac-con-11-02-02 ◽

2011 ◽

Vol 83 (11) ◽

pp. 1971-1980 ◽

Cited By ~ 3

Author(s):

Mohammad Nur-E-Alam ◽

Mikhail Vasiliev ◽

Kamal Alameh ◽

Viacheslav Kotov

Keyword(s):

High Temperature ◽

Optical Sensors ◽

Physical Vapor Deposition ◽

High Performance ◽

Near Infrared ◽

Rf Sputtering ◽

Nanocomposite Films ◽

Sputtering Deposition ◽

Garnet Phase ◽

Iron Garnet

Bi-substituted iron garnet (Bi:IG) compounds synthesized in thin film form are the best semi-transparent magneto-optical (MO) materials for applications in magnetic recording, optical sensors, and photonics. These materials can possess attractive magnetic properties and the highest specific Faraday rotation in the visible and near-infrared spectral regions, if the deposited layers contain a high volumetric fraction of the garnet phase and possess high-quality surfaces and microstructure. In this paper, we study the effects of various deposition and annealing process parameters on the properties of Bi:IG and garnet-oxide nanocomposite films of several composition types fabricated using radio-frequency (RF) sputtering deposition followed by high-temperature isothermal crystallization. We also investigate the kinetics of garnet phase formation within a garnet-Bi-oxide nanocomposite material.

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RF MAGNETIZATION OF MAGNETOSTATIC FORWARD VOLUME WAVE IN A YIG-GGG LAYERED STRUCTURE WITH APPLICATION TO DESIGN OF HIGH-PERFORMANCE GUIDED-WAVE MAGNETOOPTIC BRAGG CELLS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156491000090 ◽

1991 ◽

Vol 02 (03) ◽

pp. 185-208 ◽

Cited By ~ 17

Author(s):

Y. PU ◽

C.S. TSAI

Keyword(s):

Layered Structure ◽

High Performance ◽

Mode Conversion ◽

Guided Wave ◽

Bragg Diffraction ◽

Gadolinium Gallium Garnet ◽

Geometrical Parameters ◽

Iron Garnet ◽

First Time ◽

Good Agreement

Explicit expressions for the RF magnetization of magnetostatic forward volume waves (MSFVW) generated by a microstrip line transducer in a Yttrium Iron Garnet-Gadolinium Gallium Garnet (YIG-GGG) layered structure sandwiched between two finite ground planes have been derived for the first time. The behavior of the RF magnetization as a function of various physical and geometrical parameters and its influence on the design of high-performance guided-wave magnetooptic (MO) Bragg Cells are studied in detail. The effects of DC bias magnetic field and geometrical parameters on the RF magnetization and thus the MO Bragg diffraction or mode-conversion efficiency and the bandwidth are presented in plots generated using a computer. A good agreement between computed and experimental results has been obtained.

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PERFORMANCE AT THE EDGE: GALLIUM ARSENIDE AND SILICON ICs FOR OPTICAL ELECTRONICS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156491000077 ◽

1991 ◽

Vol 02 (03) ◽

pp. 147-162 ◽

Cited By ~ 2

Author(s):

ROBERT G. SWARTZ

Keyword(s):

Gallium Arsenide ◽

Optical Communication ◽

Optical Communications ◽

Integrated Circuit ◽

High Performance ◽

Compound Semiconductor ◽

Performance Curve ◽

Semiconductor Technology ◽

Market Trends ◽

Circuit Technology

Compound semiconductor technology is rapidly entering the mainstream, and is quickly finding its way into consumer applications where high performance is paramount. But silicon integrated circuit technology is evolving up the performance curve, and CMOS in particular is consuming ever more market share. Nowhere is this contest more clearly evident than in optical communications. Here applications demand performance ranging from a few hundreds of megahertz to multi-gigahertz, from circuits containing anywhere from tens to tens of thousands of devices. This paper reviews the high performance electronics found in optical communication applications from a technology standpoint, illustrating merits and market trends for these competing, yet often complementary IC technologies.

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Nmos Logic Circuits in Laser-Crystallized Silicon on Quartz

MRS Proceedings ◽

10.1557/proc-23-551 ◽

1983 ◽

Vol 23 ◽

Cited By ~ 1

Author(s):

A. Chiang ◽

M. H. Zarzycki ◽

W. P. Meuli ◽

N. M. Johnson

Keyword(s):

High Performance ◽

Logic Circuits ◽

Leakage Currents ◽

Enhancement Mode ◽

Low Leakage ◽

Fused Quartz ◽

Amorphous Substrates ◽

Circular Beam ◽

Processing Steps ◽

Dynamic Shift

ABSTRACTDepletion mode as well as enhancement mode n-channel thin-film transistors (TFT's) have been fabricated in CO2 laser-crystallized silicon on fused quartz. Nearly defect-free islands were obtained by using an offset circular beam to form a tilted melt interface. The optimization of subsequent processing steps to achieve simultaneously low leakage currents and voltage thresholds appropriate for depletion-load NMOS circuits involved adjustments of ion implantation and high temperature cycles with the aid of simulation. The resultant high performance silicon-gate TFT's have led to NMOS ring oscillators with 2.5 ns delay/stage and dynamic shift registers with MHz clock rates. These are the first logic circuits fabricated in beam-crystallized silicon on bulk amorphous substrates.

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High performance computing simulations to identify process parameter designs for profitable titanium machining

Journal of Manufacturing Systems ◽

10.1016/j.jmsy.2017.02.014 ◽

2017 ◽

Vol 43 ◽

pp. 235-247 ◽

Cited By ~ 12

Author(s):

Mathew Kuttolamadom ◽

Joshua Jones ◽

Laine Mears ◽

James Von Oehsen ◽

Thomas Kurfess ◽

...

Keyword(s):

High Performance Computing ◽

High Performance ◽

Process Parameter ◽

Titanium Machining ◽

Performance Computing

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The Influence of Reinforcing Fibers on the Morphology and Crystallization of Thermoplastic Polymer Composites

MRS Proceedings ◽

10.1557/proc-255-129 ◽

1991 ◽

Vol 255 ◽

Author(s):

Ludwig Rebenfeld ◽

Glenn P. Desio ◽

Veronika E. Reinsch

Keyword(s):

High Performance ◽

Crystallization Process ◽

Polarized Light ◽

Fiber Surface ◽

Weight Fraction ◽

Degree Of Crystallinity ◽

Surface Finishes ◽

Reinforcing Fibers ◽

Glass Carbon ◽

The Degree Of Crystallinity

AbstractSemi-crystalline thermoplastic polymers are being used increasingly as matrices in high performance fiber reinforced composites. The crystallization kinetics and morphology of these polymers have been studied extensively, but relatively little attention has been given to the effects of the reinforcing fibers on the crystallization process.We have studied the effects of glass, carbon and aramid fibers on the rates of crystallization, the degree of crystallinity, and the glass transition temperature of such typical thermoplastics as poly(phenylene sulfide) and poly(ethylene terephthalate). Based on the isothermal crystallization studies using DSC, we find that, in general, reinforcing fibers increase the rates of crystallization and decrease the degree of crystallinity, the extent of these effects being dependent on the weight fraction of fiber in the composite, the specific type of fiber, and the nature of surface finishes (sizes) that may have been applied.The spherulitic morphology that develops in these polymers during the crystallization process, as characterized by polarized light microscopy, is also affected by the reinforcing fibers. In many cases, transcrystalline regions develop near the fiber surface due to nucleation effects.

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Electric Field Driven Magnetic Domain Wall Motion in Iron Garnet Films

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.152-153.143 ◽

2009 ◽

Vol 152-153 ◽

pp. 143-146 ◽

Cited By ~ 5

Author(s):

A. Logginov ◽

G. Meshkov ◽

A. Nikolaev ◽

E. Nikolaeva ◽

A. Pyatakov ◽

...

Keyword(s):

Domain Wall ◽

Electric Field ◽

Wall Motion ◽

Magnetic Domain ◽

Domain Wall Motion ◽

Gadolinium Gallium Garnet ◽

Magnetic Domain Wall ◽

Garnet Films ◽

Dynamic Observation ◽

Iron Garnet

The room temperature magnetoelectric effect was observed in epitaxial iron garnet films that appeared as magnetic domain wall motion induced by electric field. The films grown on gadolinium-gallium garnet substrates with various crystallographic orientations were examined. The effect was observed in (210) and (110) films and was not observed in (111) films. Dynamic observation of the domain wall motion in 800 kV/cm electric field pulses gave the domain wall velocity in the range 30÷50 m/s. Similar velocity was achieved in magnetic field pulse about 50 Oe.

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