Differential capacitance of the P-type silicon—electrolyte solution interface

The electrooxidation of aliphatic amines ranging from ethylamine to butylamine at the gold electrode in contact with an alkaline electrolyte solution has been described. The adsorptive behaviour of substrate molecules was identified by changes in the differential capacitance of the double layer at the electrode/solution interface. Subsequent stages of the oxidation process are proposed.

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Photoelectrochemical and Photoluminescence (PL) Properties of p-Type Porous Silicon/Electrolyte Solution Interface: Potential Dependent PL Spectra as a Result of Size Dependent Quenching

The Journal of Physical Chemistry B ◽

10.1021/jp970309d ◽

1997 ◽

Vol 101 (25) ◽

pp. 4978-4981 ◽

Cited By ~ 4

Author(s):

Hidenori Noguchi ◽

Toshihiro Kondo ◽

Kohei Uosaki

Keyword(s):

Porous Silicon ◽

Electrolyte Solution ◽

Pl Spectra ◽

Size Dependent ◽

Solution Interface ◽

Interface Potential ◽

P Type

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DC and RF analysis of Vertical 3D p-type Silicon Nanotube FET for low power applications

International Journal of Electronics ◽

10.1080/00207217.2021.1941288 ◽

2021 ◽

Author(s):

Josephine Anucia. A ◽

Gracia. D ◽

Jackuline Moni D

Keyword(s):

Low Power ◽

Type Silicon ◽

P Type ◽

Silicon Nanotube

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Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽

10.1063/5.0060034 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085005

Author(s):

Kevin Lauer ◽

Geert Brokmann ◽

Mario Bähr ◽

Thomas Ortlepp

Keyword(s):

Pressure Sensors ◽

Type Silicon ◽

P Type

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P‐Type Silicon Solar Cells with Passivating Rear Contact Formed by LPCVD p + Polysilicon and Screen Printed Ag Metallization

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201900064 ◽

2019 ◽

Vol 13 (7) ◽

pp. 1900064 ◽

Cited By ~ 1

Author(s):

Sebastian Mack ◽

Martijn Lenes ◽

Jan‐Marc Luchies ◽

Andreas Wolf

Keyword(s):

Solar Cells ◽

Silicon Solar Cells ◽

Type Silicon ◽

P Type ◽

Screen Printed

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Modification of p-type Silicon for the Photoelectrochemical Reduction of CO2

ECS Transactions ◽

10.1149/1.3277248 ◽

2019 ◽

Vol 19 (35) ◽

pp. 1-7 ◽

Cited By ~ 8

Author(s):

Thomas Cottineau ◽

Mario Morin ◽

Daniel Bélanger

Keyword(s):

Type Silicon ◽

Reduction Of Co2 ◽

P Type

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Incomplete ionization and carrier mobility in compensated p-type and n-type silicon

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 ◽

10.1109/pvsc-vol2.2012.6656739 ◽

2012 ◽

Cited By ~ 1

Author(s):

M. Forster ◽

F. E. Rougieux ◽

A. Cuevas ◽

B. Dehestru ◽

A. Thomas ◽

...

Keyword(s):

Carrier Mobility ◽

Type Silicon ◽

P Type

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Radiation damage in p-type silicon irradiated with neutrons and protons

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2008.11.007 ◽

2009 ◽

Vol 599 (1) ◽

pp. 60-65 ◽

Cited By ~ 35

Author(s):

Vladimir Cindro ◽

Gregor Kramberger ◽

Manuel Lozano ◽

Igor Mandić ◽

Marko Mikuž ◽

...

Keyword(s):

Radiation Damage ◽

Type Silicon ◽

P Type

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Surface charge transfer induced p-CdS nanoribbon/n-Si heterojunctions as fast-speed self-driven photodetectors

Journal of Materials Chemistry C ◽

10.1039/c5tc01016k ◽

2015 ◽

Vol 3 (24) ◽

pp. 6307-6313 ◽

Cited By ~ 18

Author(s):

Chao Xie ◽

Fangze Li ◽

Longhui Zeng ◽

Linbao Luo ◽

Li Wang ◽

...

Keyword(s):

Charge Transfer ◽

Surface Charge ◽

Fast Speed ◽

Type Silicon ◽

P Type

Heterojunctions composed of single p-type CdS nanoribbons (NRs) and n-type silicon (Si) were successfully fabricated and can be applied as fast-speed self-driven visible photodetectors.

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