Plasma-controlled selective area growth of GaAs by electron-cyclotron resonance plasma-excited molecular-beam epitaxy (ECR-MBE)
1990 ◽
Vol 99
(1-4)
◽
pp. 302-305
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1989 ◽
Vol 96
(3)
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pp. 705-707
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1991 ◽
Vol 108
(1-2)
◽
pp. 433-435
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2002 ◽
Vol 89
(1-3)
◽
pp. 296-302
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1990 ◽
Vol 61
(9)
◽
pp. 2407-2411
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1995 ◽
Vol 24
(9)
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pp. 1201-1206
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1998 ◽
Vol 37
(Part 2, No. 6B)
◽
pp. L700-L702
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1994 ◽
Vol 12
(2)
◽
pp. 1232
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2003 ◽
Vol 0
(7)
◽
pp. 2802-2805
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