Electrical properties of GaAs selectively grown by electron cyclotron resonance plasma‐excited molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.105221 ◽

1991 ◽

Vol 58 (6) ◽

pp. 604-606 ◽

Author(s):

Norio Yamamoto ◽

Naoto Kondo ◽

Yasushi Nanishi

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Si1−x−yGexCy alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy

Materials Science and Engineering B ◽

10.1016/s0921-5107(01)00802-9 ◽

2002 ◽

Vol 89 (1-3) ◽

pp. 296-302 ◽

Author(s):

J.-M Baribeau ◽

D.J Lockwood ◽

J Balle ◽

S.J Rolfe ◽

G.I Sproule

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment

Review of Scientific Instruments ◽

10.1063/1.1141371 ◽

1990 ◽

Vol 61 (9) ◽

pp. 2407-2411 ◽

Author(s):

Z. Sitar ◽

M. J. Paisley ◽

D. K. Smith ◽

R. F. Davis

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Plasma Source ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

And Performance ◽

Resonance Plasma

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Electron cyclotron resonance plasma etching of HgTe-CdTe superlattices grown by photo-assisted molecular beam epitaxy

Journal of Electronic Materials ◽

10.1007/bf02653074 ◽

1995 ◽

Vol 24 (9) ◽

pp. 1201-1206 ◽

Author(s):

K. A. Harris ◽

D. W. Endres ◽

R. W. Yanka ◽

L. M. Mohnkern ◽

A. R. Reisinger ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Plasma Etching ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Passivation of GaAs(110) with Ga2O3 thin films deposited by electron cyclotron resonance plasma reactive molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.1497455 ◽

2002 ◽

Vol 92 (5) ◽

pp. 2330-2334 ◽

Author(s):

D. Kim ◽

G. Chen ◽

X. Y. Mei ◽

H. E. Ruda

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Structural Dependence of GaN/Al2O3 on Electric Bias During Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxy (ECR-MBE)

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l700 ◽

1998 ◽

Vol 37 (Part 2, No. 6B) ◽

pp. L700-L702 ◽

Author(s):

Yuui Shimizu ◽

Tatsuya Tominari ◽

Shingo Hokuto ◽

Yasuo Chiba ◽

Yasushi Nanishi

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Structural Dependence ◽

Resonance Plasma

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Atomic nitrogen production in a molecular-beam epitaxy compatible electron cyclotron resonance plasma source

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587052 ◽

1994 ◽

Vol 12 (2) ◽

pp. 1232 ◽

Author(s):

R. P. Vaudo

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Plasma Source ◽

Electron Cyclotron ◽

Atomic Nitrogen ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Visible emissions near 2.2 eV from InN films grown on Si (111) and sapphire (0001) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy

physica status solidi (c) ◽

10.1002/pssc.200303452 ◽

2003 ◽

Vol 0 (7) ◽

pp. 2802-2805 ◽

Author(s):

T. Yodo ◽

H. Yona ◽

Y. Harada ◽

A. Sasaki ◽

M. Yoshimoto

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Crystal Growth and Optical Property of GaN on Silica Glass by Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxy (ECR-MBE)

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l1214 ◽

1998 ◽

Vol 37 (Part 2, No. 10B) ◽

pp. L1214-L1216 ◽

Author(s):

Naoya Murata ◽

Hikari Tochishita ◽

Yuui Shimizu ◽

Tsutomu Araki ◽

Yasushi Nanishi

Keyword(s):

Crystal Growth ◽

Optical Property ◽

Molecular Beam Epitaxy ◽

Silica Glass ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Plasma-controlled selective area growth of GaAs by electron-cyclotron resonance plasma-excited molecular-beam epitaxy (ECR-MBE)

Journal of Crystal Growth ◽

10.1016/0022-0248(90)90532-p ◽

1990 ◽

Vol 99 (1-4) ◽

pp. 302-305 ◽

Author(s):

Norio Yamamoto ◽

Naoto Kondo ◽

Yasushi Nanishi

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Selective Area Growth ◽

Electron Cyclotron Resonance Plasma ◽

Selective Area ◽

Area Growth ◽

Resonance Plasma

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Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species

Journal of Applied Physics ◽

10.1063/1.357293 ◽

1994 ◽

Vol 76 (8) ◽

pp. 4587-4595 ◽

Author(s):

R. J. Molnar ◽

T. D. Moustakas

Keyword(s):

Gallium Nitride ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Charged Species ◽

Resonance Plasma

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