Optical properties of ZnSeZnTe strained layer superlattices prepared by atomic layer epitaxy

1990 ◽  
Vol 101 (1-4) ◽  
pp. 81-85 ◽  
Author(s):  
Yasushi Takemura ◽  
Shiro Dosho ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Strained Layer ◽  
Strained Layer Superlattices

InAs/InP short-period strained-layer superlattices grown by atomic layer epitaxy

1991 ◽  
Vol 115 (1-4) ◽  
pp. 324-327 ◽  
Author(s):  
Y. Sakuma ◽  
M. Ozeki ◽  
K. Kodama ◽  
N. Ohtsuka
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Strained Layer ◽  
Short Period ◽  
Strained Layer Superlattices

Atomic layer epitaxy of ZnSe-ZnTe strained layer superlattices

1989 ◽  
Vol 95 (1-4) ◽  
pp. 580-583 ◽  
Author(s):  
Shiro Dosho ◽  
Yasushi Takemura ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Strained Layer ◽  
Strained Layer Superlattices

(ZnSe)m-(ZnTe)n short-period strained layer superlattices prepared by atomic layer epitaxy

1991 ◽  
Vol 111 (1-4) ◽  
pp. 802-806 ◽  
Author(s):  
Yasushi Takemura ◽  
Hideki Nakanishi ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi ◽  
Yoshio Nakamura ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Strained Layer ◽  
Short Period ◽  
Strained Layer Superlattices

Advances in Self-Limiting Growth of Wide Bandgap II–VI Semiconductors

1991 ◽  
Vol 222 ◽  
Author(s):  
M. Konagai ◽  
Y. Takemura ◽  
H. Nakanishi ◽  
K. Takahashi
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Atomic Layer ◽  
Wide Bandgap ◽  
Atomic Layer Epitaxy ◽  
Strained Layer ◽  
Temperature Range ◽  
Recent Advances ◽  
Strained Layer Superlattices ◽  
The Ideal

ABSTRACTRecent advances in understanding the ALE (atomic layer epitaxy) growth of ZnSe, ZnS and ZnTe are reviewed. The Ideal ALE growth is obtained in the substrate temperature range of 250–350°C for ZnSe. In the ALE growth of ZnSe and ZnTe, a unique self-limiting mechanism is observed, in which the deposition rate saturates at 0.5 monolayer per cycle. Furthermore, applications of ALE of II–VI compounds to the growth of strained layer superlattices are also reviewed.

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Electronic Structure and Optical Properties of Strained Layer Superlattices

1991 ◽  
pp. 509-521
Author(s):  
G. Duggan ◽  
K. J. Moore ◽  
K. Woodbridge ◽  
C. Roberts ◽  
N. J. Pulsford ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Strained Layer ◽  
Strained Layer Superlattices
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