Effects of V/III supply ratio on improvement of crystal quality of zincblende GaN grown by gas source molecular beam epitaxy using RF-radical nitrogen source

1995 ◽  
Vol 150 ◽  
pp. 897-901 ◽  
Author(s):  
Akihiko Kikuchi ◽  
Hiroyuki Hoshi ◽  
Katsumi Kishino
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nitrogen Source ◽  
Molecular Beam ◽  
Crystal Quality ◽  
Gas Source

Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate Layers

2000 ◽  
Vol 39 (Part 2, No. 4B) ◽  
pp. L330-L333 ◽  
Author(s):  
Akihiko Kikuchi ◽  
Takayuki Yamada ◽  
Shinichi Nakamura ◽  
Kazuhide Kusakabe ◽  
Daisuke Sugihara ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Crystal Quality ◽  
Rf Plasma ◽  
Intermediate Layers

Aspects of Crystal Quality of Si (100) Films Grown by Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
W. -X. Ni ◽  
A. Henry ◽  
J. O. Ekberg ◽  
G. V. Hansson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Mechanical Stress ◽  
Chemical Etching ◽  
Molecular Beam ◽  
Crystal Quality ◽  
Radiant Heating ◽  
Resistive Heating ◽  
Good Crystal Quality ◽  
Resistively Heated

ABSTRACTSilicon layers grown by molecular beam epitaxy, using both direct resistive heating and indirect radiant heating of the substrate, have been evaluated by photoluminescence measurements, diode I-V characterization, and chemical etching tests. The results show that large densities of defects could be introduced when resistively heated substrates were experiencing thermo-mechanical stress. Films with good crystal quality were grown using a carefully designed radiant type heater.

scholarly journals Влияние степени нитридизации сапфира и обогащения алюминием зародышевого слоя на структурные свойства слоев AlN

2018 ◽  
Vol 52 (6) ◽  
pp. 643
Author(s):  
Т.В. Малин ◽  
Д.С. Милахин ◽  
В.Г. Мансуров ◽  
Ю.Г. Галицын ◽  
А.С. Кожухов ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Crystal Quality ◽  
Sapphire Substrates

AbstractThe effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.

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