Crystal quality of InN thin films grown on ZnO substrate by radio-frequency molecular beam epitaxy

ABSTRACTSilicon layers grown by molecular beam epitaxy, using both direct resistive heating and indirect radiant heating of the substrate, have been evaluated by photoluminescence measurements, diode I-V characterization, and chemical etching tests. The results show that large densities of defects could be introduced when resistively heated substrates were experiencing thermo-mechanical stress. Films with good crystal quality were grown using a carefully designed radiant type heater.

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Влияние степени нитридизации сапфира и обогащения алюминием зародышевого слоя на структурные свойства слоев AlN

Физика и техника полупроводников ◽

10.21883/ftp.2018.06.45930.8600 ◽

2018 ◽

Vol 52 (6) ◽

pp. 643

Author(s):

Т.В. Малин ◽

Д.С. Милахин ◽

В.Г. Мансуров ◽

Ю.Г. Галицын ◽

А.С. Кожухов ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Crystal Quality ◽

Sapphire Substrates

AbstractThe effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.

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Effect of III/V Ratio of HT-AlN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy

Chinese Physics Letters ◽

10.1088/0256-307x/24/1/065 ◽

2007 ◽

Vol 24 (1) ◽

pp. 240-243 ◽

Cited By ~ 2

Author(s):

Zhong Fei ◽

Qiu Kai ◽

Li Xin-Hua ◽

Yin Zhi-Jun ◽

Xie Xin-Jian ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Radio Frequency ◽

Buffer Layer ◽

Molecular Beam ◽

Aln Buffer

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Microstructure and optical properties of GaN films grown on porous SiC substrate by MBE

MRS Proceedings ◽

10.1557/proc-719-f1.3 ◽

2002 ◽

Vol 719 ◽

Author(s):

F. Yun ◽

M. A. Reshchikov ◽

L. He ◽

T. King ◽

D. Huang ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Optical Characterization ◽

Skin Layer ◽

Rocking Curve ◽

Excitonic Transition ◽

Porous Sic

AbstractGaN thin films were grown on porous SiC substrates using reactive molecular beam epitaxy with ammonia as the nitrogen source. Microstructure analysis and optical characterization were performed to assess the quality of the effect of pores on the growth and the quality of the GaN films. Results indicate that the GaN films on porous SiC are slightly less defective and more strain-relaxed (some completely relaxed) when grown on porous SiC substrate, as compared to growth on standard 6H-SiC substrates. Rocking curve FWHMs of 3.3 arcmin for (0002) diffraction and 13.7 arcmin for (1012) diffraction were obtained for sub-micron thick GaN films. Excitonic transition with FWHM as narrow as 9.5 meV was observed at 15K on the GaN layer grown on porous SiC without a skin layer.

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