Improvement of crystal quality of cubic GaN film using AlN/GaN ordered alloy on GaAs[100] by plasma assisted molecular beam epitaxy

Author(s):  
R. Kimura ◽  
A. Shigemori ◽  
J. Shike ◽  
M. Ohuchi ◽  
K. Ishida ◽  
...  
2003 ◽  
Vol 251 (1-4) ◽  
pp. 455-459 ◽  
Author(s):  
Ryuhei Kimura ◽  
Atsushi Shigemori ◽  
Junichi Shike ◽  
Koichi Ishida ◽  
Kiyoshi Takahashi

2002 ◽  
Vol 299 (1) ◽  
pp. 79-84 ◽  
Author(s):  
M Xu ◽  
C.X Liu ◽  
H.F Liu ◽  
G.M Luo ◽  
X.M Chen ◽  
...  

2000 ◽  
Vol 39 (Part 2, No. 4B) ◽  
pp. L330-L333 ◽  
Author(s):  
Akihiko Kikuchi ◽  
Takayuki Yamada ◽  
Shinichi Nakamura ◽  
Kazuhide Kusakabe ◽  
Daisuke Sugihara ◽  
...  

1991 ◽  
Vol 220 ◽  
Author(s):  
W. -X. Ni ◽  
A. Henry ◽  
J. O. Ekberg ◽  
G. V. Hansson

ABSTRACTSilicon layers grown by molecular beam epitaxy, using both direct resistive heating and indirect radiant heating of the substrate, have been evaluated by photoluminescence measurements, diode I-V characterization, and chemical etching tests. The results show that large densities of defects could be introduced when resistively heated substrates were experiencing thermo-mechanical stress. Films with good crystal quality were grown using a carefully designed radiant type heater.


Author(s):  
Т.В. Малин ◽  
Д.С. Милахин ◽  
В.Г. Мансуров ◽  
Ю.Г. Галицын ◽  
А.С. Кожухов ◽  
...  

AbstractThe effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.


2007 ◽  
Vol 308 (2) ◽  
pp. 406-411 ◽  
Author(s):  
Hanchao Gao ◽  
Wenxin Wang ◽  
Zhongwei Jiang ◽  
Linsheng Liu ◽  
Junming Zhou ◽  
...  

2003 ◽  
Vol 0 (1) ◽  
pp. 170-174
Author(s):  
A. Shigemori ◽  
J. Shike ◽  
K. Takahashi ◽  
K. Ishida ◽  
R. Kimura

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