Gas source molecular beam epitaxy of GaInAs and GaInAsP strained layer quantum well lasers emitting at 1.5 mu m

2003 ◽  
Author(s):  
C. Starck ◽  
J.-Y. Emery ◽  
R.J. Simes ◽  
P. Pagnod-Rossiaux ◽  
F. Gaborit ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Gas Source

Interfacial Quality of Strained-Layer InGaAs/GaAs Quantum Well Lasers Grown by Gas-Source Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
G. Zhang ◽  
A. Ovtchinnikov ◽  
M. Pessa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Strong Dependence ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Gas Source ◽  
Recombination Centers

ABSTRACTWe report a study of interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy. It was found that the growth temperature (Tgr) of the InGaAs layer plays an important role in the interfacial quality. For Tgr < 515 °C, a large amount of non-radiative recombination centers is likely to exist in the InGaAs/GaAs quantum well, which can be attributed to the presence of vacancies and atom clusters and lattice misfit defects. For Tgr > 515 °C, the InGaAs/GaAs interfaces show significant roughness due to In segregation. Rapid thermal annealing grades the InGaAs/GaAs interface because of interdiffusion of group-III atoms at the interface, and removes most of the non-radiative recombination centers from the low Tgr (<515 °C) samples. In addition, we observed that the interfacial quality of the InGaAs/GaAs quantum well shows no strong dependence on (100) vicinal orientations of GaAs substrate.

InGaAs/GaAs/InGaP strained-layer quantum-well lasers grown by gas-source molecular beam epitaxy

1992 ◽  
Author(s):  
Jenn-Ming Kuo ◽  
Ming C. Wu ◽  
Young-Kai Chen ◽  
M. A. Chin ◽  
A. M. Sergent
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Gas Source

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy

1999 ◽  
Vol 28 (8) ◽  
pp. 980-985 ◽  
Author(s):  
P. Savolainen ◽  
M. Toivonen ◽  
S. Orsila ◽  
M. Saarinen ◽  
P. Melanen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer

Self‐aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas‐source molecular beam epitaxy with two growth steps

1991 ◽  
Vol 59 (23) ◽  
pp. 2929-2931 ◽  
Author(s):  
Y. K. Chen ◽  
M. C. Wu ◽  
J. M. Kuo ◽  
M. A. Chin ◽  
A. M. Sergent
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source

Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

2001 ◽  
Vol 29 (2) ◽  
pp. 75-77 ◽  
Author(s):  
T. Piwo?ski ◽  
P. Sajewicz ◽  
J. M. Kubica ◽  
M. Zbroszczyk ◽  
K. Regi?ski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Long Wavelength
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