The influence of carbon addition on the internal stress and chemical inertness of amorphous silicon-nitride films

1989 ◽  
Vol 111 (2-3) ◽  
pp. 173-177
Author(s):  
Kanji Yasui ◽  
Kouichi Fukuda ◽  
Hirohisa Katoh ◽  
Shigeo Kaneda
Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.


2009 ◽  
Vol 95 (3) ◽  
pp. 031107 ◽  
Author(s):  
S. Yerci ◽  
R. Li ◽  
S. O. Kucheyev ◽  
T. van Buuren ◽  
S. N. Basu ◽  
...  

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