Chemical vapor deposition of isotropic carbon-zirconium carbide fuel particle coatings

1975 ◽  
Vol 56 (2) ◽  
pp. 239-242 ◽  
Author(s):  
G.H. Reynolds ◽  
J.L. Kaae
2016 ◽  
Vol 697 ◽  
pp. 846-851 ◽  
Author(s):  
Ma Lin Liu ◽  
Rong Zheng Liu ◽  
Jia Xing Chang ◽  
You Lin Shao

Tristructural-isotropic (TRISO) particle, with spherical ceramic fuel particle kernels followed by three layers of pyrolytic carbon and one layer of silicon carbide (SiC), has been successful now in high temperature gas cooled reactor (HTGR). The silicon carbide (SiC) layer used in TRISO coated fuel particles is normally produced at high temperatures (~1600°C) via fluidized bed chemical vapor deposition from methyltrichlorosilane (MTS) in a hydrogen environment. The precursor is strong corrosive and the process is not environmentally friendly. In this work, hexamethyldisilane (HMDS) was used instead of MTS and the deposition behavior was investigated via fluidized bed chemical vapor deposition method. Different experimental parameters were tested, such as deposition temperature (800~1450°C) and gas flow ratio of Ar: H2. The deposition rates were obtained and compared. It was found that the optimization parameters of highest deposition rate is 1000°C with the ratio of Ar: H2 of 1:1. The microstructures of the products were further investigated by SEM, XRD and Raman scattering. From the X-ray diffraction pattern it could be inferred that the β-SiC phase was obtained, and free carbon was also found in deposition products. Different types of SiC layer, including dense and porous layer can be prepared. The experimental results validated that HMDS was an alternative precursor for preparing the SiC layer in producing the TRISO particle and other SiC-coated materials in lower temperatures


1998 ◽  
Vol 555 ◽  
Author(s):  
John A. Glass ◽  
Nick Palmisiano ◽  
R. Edward Welsh

AbstractZirconium carbide is an attractive ceramic material due to its unique properties such as high melting point, good thermal conductivity, and chemical resistance. The controlled preparation of zirconium carbide films of superstoichiometric, stoichiometric, and substoichiometric compositions has been achieved utilizing zirconium tetrachloride and methane precursor gases in an atmospheric pressure high temperature chemical vapor deposition system. Laminar and equiaxial microcrystalline morphologies were obtained for superstoichiometric and substoichiometric zirconium carbide; respectively, allowing cursory metallographic identification of composition. Observed reductions in film density associated with zirconium carbide films that contain additional free carbon or excess zirconium are reported. These changes in film density were found to be consistent with compositional changes. An apparently linear relationship (correlation of 0.99) between methane flow in this chemical vapor deposition system and zirconium carbide stoichiometry in the substoichiometric range deposited above ZrC0.61 has been observed.


2019 ◽  
Vol 25 (8) ◽  
pp. 291-299 ◽  
Author(s):  
Wei Sun ◽  
Xiang Xiong ◽  
Baiyun Huang ◽  
Guodong Li ◽  
Hongbo Zhang ◽  
...  

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