Novel active dirhodium complexes for the low pressure hydroformylation reaction. Unexpected inhibiting effect of high partial pressures of hydrogen

AbstractThe influence of temperature gradients on the partial pressures of a binary mixture in a cold wall low pressure chemical vapor deposition reactor was determined by Raman spectroscopy of the gaseous species in the reactor. It is demonstrated for the first time that the partial pressure of the heavy constituent in the hot region of a low pressure reactor is reduced by 35 % due to the Soret effect. Model calculations that included the Soret effect are in agreement with the experimental data.

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μ-Thiolato dirhodium complexes in hydroformylation: study of the low pressure catalytic activity and comparison of Cp2Zr(CH2PPh2)2 a zirconium diphosphine ligand with several classical diphosphines

Journal of Molecular Catalysis ◽

10.1016/0304-5102(86)87026-2 ◽

1986 ◽

Vol 35 (2) ◽

pp. 213-219 ◽

Cited By ~ 26

Author(s):

François Senocq ◽

Claire Randrianalimanana ◽

Alain Thorez ◽

Philippe Kalck ◽

Robert Choukroun ◽

...

Keyword(s):

Catalytic Activity ◽

Low Pressure ◽

Diphosphine Ligand ◽

Dirhodium Complexes

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Low Pressure Mocvd Growth of InSb

MRS Proceedings ◽

10.1557/proc-216-233 ◽

1990 ◽

Vol 216 ◽

Cited By ~ 2

Author(s):

B.T. Cunningham ◽

R.P. Schneider ◽

R.M. Biefeld

Keyword(s):

Atmospheric Pressure ◽

Chemical Vapor ◽

Hole Mobility ◽

Low Pressure ◽

Lower Growth ◽

Growth Pressure ◽

Mocvd Growth ◽

Partial Pressures ◽

Low Pressure Mocvd ◽

Sims Analysis

ABSTRACTLow pressure (200 Torr) metalorganic chemical vapor deposition (MOCVD) of InSb has been examined through variation of the Column III (TMIn) and Column V (TMSb or TESb) precursor partial pressures. The use of lower growth pressure significantly enhanced the range of allowable Column III and Column V partial pressures in which specular morphology InSb could be obtained without the formation of In droplets or Sb crystals. In addition, a 70% improvement in the average hole mobility was obtained, compared to InSb grown in the same reactor at atmospheric pressure. SIMS analysis revealed that Si at the substrate/epitaxial layer interface is an important impurity that may contribute to degradation of the mobility. Substitution of TESb for TMSb did not result in any improvement in the purity of the InSb.

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Influence of temperature gradients on partial pressures in a low‐pressure chemical‐vapor‐deposition reactor

Journal of Applied Physics ◽

10.1063/1.357495 ◽

1994 ◽

Vol 76 (5) ◽

pp. 3130-3139 ◽

Cited By ~ 3

Author(s):

T. G. M. Oosterlaken ◽

G. J. Leusink ◽

G. C. A. M. Janssen ◽

S. Radelaar ◽

K. J. Kuijlaars ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Temperature Gradients ◽

Influence Of Temperature ◽

Chemical Vapor Deposition Reactor ◽

Partial Pressures ◽

Pressure Chemical

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Effects of Electrical Discharges in Low Pressure Gases on the Morphology of Polyethylene Crystals

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100052730 ◽

1974 ◽

Vol 32 ◽

pp. 544-545

Author(s):

L.H. Bolz ◽

D.H. Reneker

Keyword(s):

Power Distribution ◽

Electrical Discharge ◽

Dielectric Breakdown ◽

Ionic Species ◽

Low Pressure ◽

Polymer Surfaces ◽

Electrical Discharges ◽

Adhesive Bonds ◽

Power Distribution Lines ◽

Modification Of The Surface

The attack, on the surface of a polymer, by the atomic, molecular and ionic species that are created in a low pressure electrical discharge in a gas is interesting because: 1) significant interior morphological features may be revealed, 2) dielectric breakdown of polymeric insulation on high voltage power distribution lines involves the attack on the polymer of such species created in a corona discharge, 3) adhesive bonds formed between polymer surfaces subjected to such SDecies are much stronger than bonds between untreated surfaces, 4) the chemical modification of the surface creates a reactive surface to which a thin layer of another polymer may be bonded by glow discharge polymerization.

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Field ion microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104236 ◽

1988 ◽

Vol 46 ◽

pp. 434-435

Author(s):

Gert Ehrlich

Keyword(s):

Low Temperature ◽

Sample Surface ◽

Low Pressure ◽

Radius Of Curvature ◽

Field Ion Microscopy ◽

Phosphor Screen ◽

Ion Microscopy ◽

Field Ion Microscope

The field ion microscope, devised by Erwin Muller in the 1950's, was the first instrument to depict the structure of surfaces in atomic detail. An FIM image of a (111) plane of tungsten (Fig.l) is typical of what can be done by this microscope: for this small plane, every atom, at a separation of 4.48Å from its neighbors in the plane, is revealed. The image of the plane is highly enlarged, as it is projected on a phosphor screen with a radius of curvature more than a million times that of the sample. Müller achieved the resolution necessary to reveal individual atoms by imaging with ions, accommodated to the object at a low temperature. The ions are created at the sample surface by ionization of an inert image gas (usually helium), present at a low pressure (< 1 mTorr). at fields on the order of 4V/Å.

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