Influence of temperature gradients on partial pressures in a low‐pressure chemical‐vapor‐deposition reactor

1994 ◽  
Vol 76 (5) ◽  
pp. 3130-3139 ◽  
Author(s):  
T. G. M. Oosterlaken ◽  
G. J. Leusink ◽  
G. C. A. M. Janssen ◽  
S. Radelaar ◽  
K. J. Kuijlaars ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Temperature Gradients ◽  
Influence Of Temperature ◽  
Chemical Vapor Deposition Reactor ◽  
Partial Pressures ◽  
Pressure Chemical

The Influence of Temperature Gradients on Partial Pressures in a Cvd Reactor

1993 ◽  
Vol 334 ◽  
Author(s):  
T.G.M. Oosterlaken ◽  
G.J. Leusink ◽  
G.C.A.M. Janssen ◽  
S. Radelaar ◽  
K.J. Kuijlaars ◽  
...  
Keyword(s):  
Soret Effect ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Temperature Gradients ◽  
Gaseous Species ◽  
Model Calculations ◽  
Influence Of Temperature ◽  
Effect Model ◽  
Partial Pressures ◽  
Pressure Chemical

AbstractThe influence of temperature gradients on the partial pressures of a binary mixture in a cold wall low pressure chemical vapor deposition reactor was determined by Raman spectroscopy of the gaseous species in the reactor. It is demonstrated for the first time that the partial pressure of the heavy constituent in the hot region of a low pressure reactor is reduced by 35 % due to the Soret effect. Model calculations that included the Soret effect are in agreement with the experimental data.

Combinatorial Chemical Vapor Deposition of Metal Silicate Films Using Tri(t -butoxy) silanol and Anhydrous Metal Nitrates

2003 ◽  
Vol 804 ◽  
Author(s):  
Lijuan Zhong ◽  
Fang Chen ◽  
Stephen A. Campbell ◽  
Wayne L. Gladfelter
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Rutherford Backscattering ◽  
Chemical Vapor Deposition Reactor ◽  
Metal Nitrates ◽  
Metal Silicate ◽  
Pressure Chemical

ABSTRACTA modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250 °C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.

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