Galvanomagnetic effects in n-InSb at low temperatures in strong magnetic fields

1959 ◽  
Vol 8 ◽  
pp. 518-523 ◽  
Author(s):  
J.C. Haslett ◽  
W.F. Love
1989 ◽  
Vol 71 (12) ◽  
pp. 1067-1071
Author(s):  
A.J. Kil ◽  
R.J.J. Zijlstra ◽  
M.F.H. Schuurmans ◽  
J.P. André

In a paper published last year the author described a systematic research on the change of resistance which occurs in a number of metals in strong magnetic fields. As a result of these investigations the following formulæ expressing the relative change of resistance ∆R/R o with the field H were found to hold :— ∆R/R o = β' H 2 /3H k H ≼ H k , (1) and ∆R/R o = β' ( H-H k +H k 2 /3H) H ≽ H k , (2) where β' and H k are constant for a given sample of a metal and at a given temperature. These two expressions form a continuous curve, and it is evident that the formula (1) which holds for the weaker fields, shows that the resistance increases as the square of H, and formula (2) indicates that the change of resistance in strong fields approaches a linear law. These two formulæ have been obtained mathematically on the following assumption. It is known that in a metal which is not in a perfect crystalline state, and which contains even small traces of impurities, there exists a disturbance which increases its specific resistance. My hypothesis was that a magnetic field increases the specific resistance in a similar way to these imperfections, so that they are equivalent to an internal magnetic field H k , orientated at random. Then, if the metal is brought under the influence of an outside magnetic field H, the increase of resistance is such as would be produced by a combination of the two fields. Further, I assumed that the increase of resistance is proportional to the magnetic field, and this led to formulæ (1) and (2) which appear to fit all my experimental results very well. Several important consequences follow from this hypothesis.


2021 ◽  
Vol 57 (2) ◽  
pp. 94-99
Author(s):  
L.U. Taimuratova ◽  

The study of galvanomagnetic phenomena in silicon, in strong magnetic fields, is associated with great difficulties due to the high resistance of the samples and the complexity of preparing omics contacts that work well in a wide range of temperatures and magnetic fields. Therefore, until now, all existing data on galvanomagnetic effects in silicon have been obtained only in the region of weak magnetic fields. Given the growing interest in silicon due to its large potential, it seemed appropriate to study the galvanomagnetic effects in the region of strong magnetic fields, where quantum effects play the dominant role. The study of Galvano-magnetic effects (as well as tensoeffects) in silicon under extreme conditions allows not only to identify the mechanisms of these effects, but also to identify the possibility of creating gaussmeters, infrared detectors, sensitive strain gauges, amplifiers and generators of a wide frequency range. Keywords: galvano-magnetic effects, silicon, negative magnetoresistance, uniaxial pressure.


1977 ◽  
Vol 20 (4) ◽  
pp. 513-521 ◽  
Author(s):  
D. N. Astrov ◽  
G. S. Abilov ◽  
B. I. Al'shin

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