Growth and characterization of high-quality InP/Ga0.25In0.75As0.5P0.5 and InP/Ga0.17In0.83As0.35P0.65 grown by the LP-MOCVD technique
Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001) by Reactive Molecular Epitaxy
1998 ◽
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2000 ◽
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2018 ◽
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