Analysis of facet reflectivity, mirror loss, single-transverse mode condition and beam divergence angle at 1.3 μm and 1.55 μm wavelength of InGaAsP/InP buried heterostructure semiconductor laser diodes
1990 ◽
Vol 22
(1)
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pp. 38-46
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1997 ◽
Vol 36
(Part 1, No. 5A)
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pp. 2676-2680
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2019 ◽
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pp. 69
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1988 ◽
Vol 1
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pp. 384-386
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1991 ◽
Vol 4
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pp. 148-151
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1999 ◽
Vol 43
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pp. 33-39
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1981 ◽
Vol 17
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pp. 787-795
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2001 ◽
Vol 7
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pp. 124-134
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