10 GHz Si Schottky-barrier IMPATT diode with hyperabrupt impurity distribution produced by ion implantation

Solid-State Electronics ◽

10.1016/0038-1101(72)90052-4 ◽

1972 ◽

Vol 15 (2) ◽

pp. 189-193 ◽

Author(s):

T. Misawa ◽

R.A. Moline ◽

A.R. Tretola

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Impurity Distribution ◽

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10 GHZ Si Schottky-barrier impatt diode with hyperabrupt impurity distribution produced by ion implantation

Microelectronics Reliability ◽

10.1016/0026-2714(72)90227-2 ◽

1972 ◽

Vol 11 (3) ◽

pp. 248-249

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Impurity Distribution ◽

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Effect of argon ion implantation dose on silicon Schottky barrier characteristics

Applied Physics Letters ◽

10.1063/1.95247 ◽

1984 ◽

Vol 45 (4) ◽

pp. 431-433 ◽

Author(s):

S. Ashok ◽

H. Kräutle ◽

H. Beneking

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Implantation Dose ◽

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Vertical Ga2O3 Schottky Barrier Diodes with Guard Ring Formed by Nitrogen-Ion Implantation

2019 Compound Semiconductor Week (CSW) ◽

10.1109/iciprm.2019.8819031 ◽

2019 ◽

Author(s):

Chia-Hung Lin ◽

Yohei Yuda ◽

Man Hoi Wong ◽

Mayuko Sato ◽

Nao Takekawa ◽

...

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Nitrogen Ion Implantation ◽

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Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

IEEE Electron Device Letters ◽

10.1109/led.2012.2220954 ◽

2012 ◽

Vol 33 (12) ◽

pp. 1687-1689 ◽

Author(s):

Zhiqiang Li ◽

Xia An ◽

Min Li ◽

Quanxin Yun ◽

Meng Lin ◽

...

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height

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A High Power Gaas Schottky Barrier Impatt Diode in 30GHZ Band

10.1109/euma.1973.331595 ◽

1973 ◽

Author(s):

Masatoshi Migitaka ◽

Michiharu Nakamura ◽

Katsutoshi Saito ◽

Kenji Sekine

Keyword(s):

Schottky Barrier ◽

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Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

IEEE Electron Device Letters ◽

10.1109/led.2009.2031828 ◽

2009 ◽

Vol 30 (11) ◽

pp. 1140-1142 ◽

Author(s):

Wei-Yip Loh ◽

H. Etienne ◽

B. Coss ◽

I. Ok ◽

D. Turnbaugh ◽

...

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

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High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd46842.2020.9170190 ◽

2020 ◽

Author(s):

Ruiyuan Yin ◽

Yue Li ◽

Cheng P. Wen ◽

Yunyi Fu ◽

Yilong Hao ◽

...

Keyword(s):

Ion Implantation ◽

Space Charge ◽

Schottky Barrier ◽

High Voltage ◽

High Energy ◽

Schottky Barrier Diode ◽

Induced Field ◽

Field Modulation

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Millimeter-Wave GaAs Schottky-Barrier IMPATT Diode

10.7567/ssdm.1972.2-2 ◽

1972 ◽

Author(s):

Kiyoshi Nawata ◽

Mutsuo Ikeda ◽

Yasuhiro Ishii

Keyword(s):

Schottky Barrier ◽

Millimeter Wave ◽

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Noise characteristics of Ni/GaN Schottky barrier IMPATT diode based on polar- and nonpolar-oriented wurtzite GaN for terahertz application

Superlattices and Microstructures ◽

10.1016/j.spmi.2020.106405 ◽

2020 ◽

Vol 139 ◽

pp. 106405

Author(s):

Xiao-Yu Zhang ◽

Lin-An Yang ◽

Yao Ma ◽

Yu-Chen Liu ◽

Wen-Lu Yang ◽

...

Keyword(s):

Schottky Barrier ◽

Impatt Diode ◽

Noise Characteristics

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Low‐energy hydrogen ion implantation in Schottky barrier control

Applied Physics Letters ◽

10.1063/1.96133 ◽

1985 ◽

Vol 47 (4) ◽

pp. 426-428 ◽

Author(s):

R. Singh ◽

S. Ashok

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Hydrogen Ion ◽

Hydrogen Ion Implantation

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