Effect of argon ion implantation dose on silicon Schottky barrier characteristics

AbstractAn Mo gate work function control technique which uses annealing or N+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO2 and found that the gate leakage current was increased as the N+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x1020 cm-3 for the specimen with a large work function shift.

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Formation of silver single crystal thin films by argon ion implantation

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(93)96007-y ◽

1993 ◽

Vol 82 (4) ◽

pp. 533-538

Author(s):

Zhao Yun-Fei ◽

Yin Dong ◽

Pang Shi-Jin

Keyword(s):

Thin Films ◽

Ion Implantation ◽

Single Crystal ◽

Silver Single Crystal ◽

Argon Ion

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Effects of nitrogen or argon ion implantation on the electrochemical behavior of pure chromium.

Journal of The Surface Finishing Society of Japan ◽

10.4139/sfj.41.576 ◽

1990 ◽

Vol 41 (5) ◽

pp. 576-577

Author(s):

Keiichi TERASHIMA ◽

Kikuo MATSUSAKA ◽

Tomoya MINEGISHI

Keyword(s):

Ion Implantation ◽

Electrochemical Behavior ◽

Pure Chromium ◽

Argon Ion

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Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

Journal of Micromanufacturing ◽

10.1177/2516598418785507 ◽

2018 ◽

Vol 1 (2) ◽

pp. 115-123 ◽

Cited By ~ 1

Author(s):

Zhongdu He ◽

Zongwei Xu ◽

Mathias Rommel ◽

Boteng Yao ◽

Tao Liu ◽

...

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Focused Ion Beam ◽

Electron Backscatter Diffraction ◽

Ion Beam ◽

Implantation Dose ◽

Formation Mechanisms ◽

Schematic Model ◽

Dose Threshold ◽

Before And After

In order to investigate the damage in single-crystal 6H-silicon carbide (SiC) in dependence on ion implantation dose, ion implantation experiments were performed using the focused ion beam technique. Raman spectroscopy and electron backscatter diffraction were used to characterize the 6H-SiC sample before and after ion implantation. Monte Carlo simulations were applied to verify the characterization results. Surface morphology of the implantation area was characterized by the scanning electron microscope (SEM) and atomic force microscope (AFM). The ‘swelling effect’ induced by the low-dose ion implantation of 1014−1015 ions cm−2 was investigated by AFM. The typical Raman bands of single-crystal 6H-SiC were analysed before and after implantation. The study revealed that the thickness of the amorphous damage layer was increased and then became saturated with increasing ion implantation dose. The critical dose threshold (2.81 × 1014−3.26 × 1014 ions cm−2) and saturated dose threshold (˜5.31 × 1016 ions cm−2) for amorphization were determined. Damage formation mechanisms were discussed, and a schematic model was proposed to explain the damage formation.

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