A High Power Gaas Schottky Barrier Impatt Diode in 30GHZ Band

1973 ◽  
Author(s):  
Masatoshi Migitaka ◽  
Michiharu Nakamura ◽  
Katsutoshi Saito ◽  
Kenji Sekine
Keyword(s):  
Schottky Barrier ◽  
High Power ◽  
Impatt Diode

High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission

2022 ◽  
Vol 43 (1) ◽  
pp. 012302
Author(s):  
K. S. Zhuravlev ◽  
A. L. Chizh ◽  
K. B. Mikitchuk ◽  
A. M. Gilinsky ◽  
I. B. Chistokhin ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transmission Lines ◽  
High Power ◽  
High Speed ◽  
Signal Transmission ◽  
Mesa Structure ◽  
Microwave Characterization ◽  
Absorbing Layer ◽  
Analog Transmission

Abstract The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.

scholarly journals Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 575 ◽  
Author(s):  
Yue Sun ◽  
Xuanwu Kang ◽  
Yingkui Zheng ◽  
Jiang Lu ◽  
Xiaoli Tian ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Schottky Barrier ◽  
High Power ◽  
High Frequency ◽  
Recent Progress ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

High-power high-efficiency operation of read-type IMPATT-diode oscillators

1973 ◽  
Vol 9 (8-9) ◽  
pp. 173 ◽  
Author(s):  
C. Kim ◽  
R. Steele ◽  
R. Bierig
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Impatt Diode

High power and high efficiency GaN HEMT with WN Schottky barrier

2012 ◽  
Author(s):  
Tangsheng Chen ◽  
Jianjun Zhou ◽  
Chunjiang Ren ◽  
Zhonghui Li ◽  
Shichang Zhong ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Power ◽  
High Efficiency ◽  
Gan Hemt

Towards High-Power Multipliers Using Diamond Schottky Barrier Diodes

2021 ◽  
Author(s):  
Xenofon Konstantinou ◽  
Cristian J. Herrera-Rodriguez ◽  
Junyu Lai ◽  
Aaron Hardy ◽  
John D. Albrecht ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Power ◽  
Schottky Barrier Diodes
Sign in / Sign up

Export Citation Format

Share Document