Determination of a microwave transistor model based on an experimental study of its internal structure

1975 ◽  
Vol 18 (11) ◽  
pp. 949-963 ◽  
Author(s):  
R.L. Kronquist ◽  
J.Y. Fourrier ◽  
J.P. Pestie ◽  
M.E. Brilman
Solar Energy ◽  
2021 ◽  
Vol 224 ◽  
pp. 1326-1332
Author(s):  
Engin Ozbas ◽  
Selcuk Selimli ◽  
Mehmet Ozkaymak ◽  
Alsediq s. s. Frej

2009 ◽  
Vol 277 (2) ◽  
pp. 96-106 ◽  
Author(s):  
E. Kriesten ◽  
M.A. Voda ◽  
A. Bardow ◽  
V. Göke ◽  
F. Casanova ◽  
...  

2005 ◽  
Vol 11 (3) ◽  
pp. 170-173 ◽  
Author(s):  
Mehmet Dündar ◽  
Izzet Koçak ◽  
Nil Çulhaci ◽  
Haluk Erol

Author(s):  
LJ. Tanovic ◽  
P. Bojanic ◽  
R. Puzovic ◽  
S. Klimenko

This paper offers an experimental study of the microcutting mechanisms in marble grinding to aid the optimization of the marble grinding process. The necessity for investigating these mechanisms is dictated by the increased use of marble in many applications and the fact that grinding and polishing processes are the dominant technologies used to meet surface finish requirements in this natural material. The experiments are aimed at the determination of the normal component of the cutting force and of the grain traces in microcutting with a single diamond grain. The investigations carried out make provisions for establishing critical grain penetration and cutting depths and allow the prediction of the normal cutting force component as a function of grain penetration speed and depth.


1986 ◽  
Vol 71 ◽  
Author(s):  
I. Suni ◽  
M. Finetti ◽  
K. Grahn

AbstractA computer model based on the finite element method has been applied to evaluate the effect of the parasitic area between contact and diffusion edges on end resistance measurements in four terminal Kelvin resistor structures. The model is then applied to Al/Ti/n+ Si contacts and a value of contact resistivity of Qc = 1.8×10−7.Ωcm2 is derived. For comparison, the use of a self-aligned structure to avoid parasitic effects is presented and the first experimental results obtained on Al/Ti/n+Si and Al/CoSi2/n+Si contacts are shown and discussed.


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