A computer-aided simulation model for the I–V characteristic of M-n-p silicon Schottky-barrier diodes produced by use of low-energy arsenic-ion implantation

1983 ◽  
Vol 26 (9) ◽  
pp. 893-900 ◽  
Author(s):  
Ching-Yuan Wu ◽  
Ming-Chein Chang ◽  
An-Jui Shey
Keyword(s):  
Ion Implantation ◽  
Simulation Model ◽  
Schottky Barrier ◽  
Low Energy ◽  
Schottky Barrier Diodes ◽  
Computer Aided

Current-voltage characteristics of low energy proton and alpha particle irradiated Au and Schottky barrier diodes

1997 ◽  
Vol 41 (5) ◽  
pp. 802-805 ◽  
Author(s):  
S Arulkumaran ◽  
J Arokiaraj ◽  
N Dharmarasu ◽  
J Kumar ◽  
P Magudapathy ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Alpha Particle ◽  
Low Energy ◽  
Schottky Barrier Diodes ◽  
Energy Proton ◽  
Current Voltage ◽  
Current Voltage Characteristics

Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

2019 ◽  
Vol 40 (9) ◽  
pp. 1487-1490 ◽  
Author(s):  
Chia-Hung Lin ◽  
Yohei Yuda ◽  
Man Hoi Wong ◽  
Mayuko Sato ◽  
Nao Takekawa ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Schottky Barrier ◽  
Guard Ring ◽  
Schottky Barrier Diodes ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion
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